BSC118N10NSGATMA1 vs BSC0902NSATMA1 对比
详细并排对比 BSC118N10NSGATMA1 出自 Infineon 和 BSC0902NSATMA1 出自 Infineon。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况，以确定最适合您设计需求的元器件。
规格对比
| 参数 | BSC118N10NSGATMA1 | BSC0902NSATMA1 |
|---|---|---|
| 品牌 | Infineon | Infineon |
| 分类 | MOSFETs | MOSFETs |
| 生命周期状态 | 有效 | 有效 |
| 库存状态 | 有库存 | 有库存 |
| 单价（USD） | $0.78 | $0.78 |
| Manufacturer | Infineon Technologies | — |
| Product Family | OptiMOS 2 | — |
| FET Type | N-Channel | — |
| Mode | Enhancement (Normal Level) | — |
| Drain-Source Voltage (VDS) | 100 V | 30 V |
| Continuous Drain Current (ID) at Ta=25C | 11 A | — |
| Continuous Drain Current (ID) at Tc=25C | 71 A | — |
| Power Dissipation (PD) at Tc=25C | 114 W | — |
| 封装 | PG-TDSON-8-1 (TDSON EP, 5x6 mm) | PG-TDSON-8-6 (SuperSO8) |
| 安装类型 | Surface Mount | Surface Mount |
| 工作结温 | -55 C to +150 C | — |
| Technology | Trench MOSFET | — |
| Lead Plating | Pb-free | — |
| RoHS 状态 | Compliant | — |
| 无卤 | Yes | Yes, per IEC 61249-2-21 |
| JEDEC Qualification | Qualified per target application | — |
| Target Application | High-frequency SMPS, synchronous rectification | — |
| Gate Charge x RDS(on) FOM | Excellent (per datasheet) | — |
| 晶体管类型 | — | N-Channel MOSFET |
| Continuous Drain Current (ID, Ta) | — | 24 A |
| Pulsed Drain Current (IDM, Tc) | — | 100 A |
| Power Dissipation (Ta) | — | 2.5 W |
| Power Dissipation (Tc) | — | 48 W |
| Gate Threshold Voltage (VGS(th) typ) | — | [DATA_NEEDED: VGS(th) typical value] |
| RDS(on) @ VGS=10V max | — | [DATA_NEEDED: RDS(on) at VGS=10V] |
| RDS(on) @ VGS=4.5V max | — | [DATA_NEEDED: RDS(on) at VGS=4.5V] |
| Total Gate Charge (Qg typ) | — | [DATA_NEEDED: Qg typical] |
| 工作温度范围 | — | -55C to +150C (Tj) |
| Qualification | — | JEDEC qualified for target applications |
| RoHS Compliance | — | Compliant (Pb-free lead plating) |
| Avalanche Rated | — | Yes (100% avalanche tested) |