BSC120N03LSGATMA1 vs BSC0906NSATMA1 比較
詳細な並列比較: BSC120N03LSGATMA1 メーカー: Infineon および BSC0906NSATMA1 メーカー: Infineon。主要仕様、電気的特性、パッケージ、ライフサイクルステータス、価格、在庫状況を比較して、設計要件に最適な部品を判断してください。
仕様比較
| パラメータ | BSC120N03LSGATMA1 | BSC0906NSATMA1 |
|---|---|---|
| ブランド | Infineon | Infineon |
| カテゴリ | MOSFETs | MOSFETs |
| ライフサイクル状態 | 有効 | 有効 |
| 在庫状況 | In Stock | In Stock |
| 単価（USD） | $0.36 | $0.48 |
| Manufacturer | Infineon Technologies | — |
| Product Family | OptiMOS 3 | — |
| FET Type | N-Channel | N-Channel |
| Drain-Source Voltage (VDS) | 30 V | — |
| Continuous Drain Current (ID) at Ta=25C | 12 A | — |
| Continuous Drain Current (ID) at Tc=25C | 39 A | — |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: pulsed drain current] | — |
| Gate-Source Voltage (VGS) max | +/-20 V | — |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: VGS(th) typical value] | [DATA_NEEDED: VGS(th) typ/min/max] |
| On-State Resistance RDS(on) at VGS=10V | 12 mOhm (typical) | — |
| On-State Resistance RDS(on) at VGS=4.5V | [DATA_NEEDED: RDS(on) at 4.5V] | — |
| Power Dissipation (Ta) | 2.5 W | — |
| Power Dissipation (Tc) | 28 W | — |
| 動作温度範囲 | -55C to +150C (TJ) | -55C to +150C (junction, typical) |
| パッケージ | PG-TDSON-8-5 (SuperSO-8, 5x6 mm) | PG-TDSON-8-6 (SuperSO8, 5x6 mm) |
| 実装タイプ | Surface Mount | Surface Mount |
| MSLレベル | 1 (per JEDEC J-STD-020) | — |
| RoHS ステータス | Compliant | Compliant |
| Drain-to-Source Voltage (VDS) | — | 30 V |
| Continuous Drain Current (ID) at Ta | — | 18 A |
| Continuous Drain Current (ID) at Tc | — | 63 A |
| Power Dissipation at Ta | — | 2.5 W |
| Power Dissipation at Tc | — | 30 W |
| Technology | — | OptiMOS |
| RDS(on) max (typical reference) | — | [DATA_NEEDED: RDS(on) max @ VGS=10V] |
| Total Gate Charge (Qg) | — | [DATA_NEEDED: Qg @ VGS=10V] |
| ピン数 | — | 8 |