BSP125H6327XTSA1 - 600V 120mA N-Ch SIPMOS | SOT-223 | Infineon
部品番号: BSP125H6327XTSA1 ✓ 生産中| 数量 | 単価 | 小計 |
|---|---|---|
| 1 | $0.68 | $0.68 |
| 10 | $0.59 | $5.90 |
| 100 | $0.51 | $51.00 |
| 500 | $0.46 | $230.00 |
| 1,000 | $0.43 | $430.00 |
| 5,000 | $0.38 | $1,900.00 |
BSP125H6327XTSA1 概要
What is a small-signal MOSFET? A small-signal MOSFET is a discrete field-effect transistor designed for switching and amplification at modest current levels (typically under 1 A), as opposed to power MOSFETs that handle tens or hundreds of amps. Small-signal MOSFETs sit within the broader taxonomy of discrete semiconductors (MOSFET -> transistor -> semiconductor) and are commonly used as interface switches, level shifters, and high-side/low-side drivers in mixed-signal designs. The SIPMOS (Siemens/Infineon Power MOSFET) process technology combines vertical DMOS structures with low on-resistance per unit area, making it suitable for high-voltage, low-current applications.
Key features of the BSP125H6327XTSA1 include a 600 V drain-source breakdown voltage (V(BR)DSS), low on-resistance for the current class, fast switching characteristics suited to PWM and driver stages, and an integrated tab for improved thermal dissipation via the PCB copper pad. The device is qualified for use in automotive and industrial environments, supporting applications from LED lighting drivers to relay replacements and small motor control circuits. Its SOT-223 footprint provides significantly better thermal performance than smaller packages like SOT-23 while occupying less board space than DPAK.
Technically, the BSP125 uses Infineon's well-proven N-channel enhancement-mode SIPMOS process, with a gate threshold typically in the 1-2 V range for direct logic-level driving from 3.3 V or 5 V microcontrollers. The device's avalanche-rated construction provides ruggedness against inductive load transients, an important characteristic when driving relays, solenoids, or small transformers.
Typical applications include automotive interior and signaling lighting, high-side load switching, small DC-DC converter start-up circuits, flyback primary-side switches below 120 mA, and signal-level analog switching in instrumentation. The wide VDS margin of 600 V also makes it suitable for offline (mains-referenced) low-power control circuits with appropriate derating.
When designing with this part, observe the safe operating area at elevated temperatures - the 120 mA and 1.8 W ratings are at Ta=25°C and must be derated for ambient temperatures above 25°C. The tab pin should be soldered to a copper pour of at least 100 mm² for thermal relief in continuous-operation designs.
ドロップイン代替品: BSP125H6327XTSA1 — 同一パッケージでピン互換。PCBの作り直しが必要な異なるパッケージの部品は除外されています。
このシリーズのバリエーション
同一シリーズでドロップイン互換のモデル: BSP125H6327XTSA1 （同一形状・フットプリント） — 相違点: Package, FET Type, Operating Temperature Range, Technology, Part Number.
クイック比較ツール — 並列比較する代替部品を選択:
BSP130H6327XTSA1
✅ ドロップイン ⚠️ 仕様未検証📋 参考代替品（カタログ未掲載）
BSP89H6327XTSA1
✅ ドロップイン✓ 在庫あり
$0.39 / 個
データシートを見る →BSR316PH6327XTSA1
✅ ドロップイン✓ 在庫あり
$0.22 / 個
データシートを見る →BSP125H6327XTSA1 最大定格＆電気的特性
| Manufacturer | Infineon Technologies |
| Part Number | BSP125H6327XTSA1 |
| トランジスタタイプ | N-Channel MOSFET |
| Technology | SIPMOS (Small Signal Power MOSFET) |
| Drain-Source Voltage (VDS) | 600 V |
| Continuous Drain Current (ID) | 120 mA (Ta) |
| Power Dissipation (PD) | 1.8 W (Ta) |
| パッケージ | PG-SOT223-4 (SOT-223-3 + tab) |
| 実装タイプ | Surface Mount |
| 動作温度 | -55C to +150C (TJ) |
| Configuration | Single |
| Channel Mode | Enhancement |
| RoHS ステータス | Compliant |
| MSLレベル | 1 (Unlimited) |
| Qualification | Automotive / Industrial grade |
BSP125H6327XTSA1 ピン構成
| ピン 1 | GATE — Gate control input (logic-level compatible) |
| ピン 2 | DRAIN — Drain terminal (connected to load) |
| ピン 3 | SOURCE — Source terminal (typically ground) |
| ピン 4 | TAB (DRAIN) — Thermal tab internally connected to DRAIN for heatsinking via PCB copper |
安全動作領域 (DC, Ta=25C, SOT-223 on minimum pad)
主な用途
BSP125H6327XTSA1 の用途: 6 件s: Automotive LED Lighting Drivers, Relay Replacement and Solid-State Switching, Small Motor Control and Solenoid Drivers, Offline (Mains-Referenced) Control Circuits, Level Shifters and Signal Interface Switches, High-Side Load Switches in Industrial 24V/48V Systems.
Automotive LED Lighting Drivers
The BSP125H6327XTSA1 fits automotive interior and signaling LED driver circuits thanks to its 600 V drain-source rating (which tolerates load-dump transients on the 12 V bus) and 120 mA continuous drain current (sufficient for multiple LED strings). Placed as a low-side switch or PWM dimmer element between the LED cathode and ground, it provides fast switching for flicker-free dimming and benefits from the SOT-223 tab's 1.8 W dissipation capacity to handle continuous current without thermal shutdown. Unlike a SOT-23 alternative, the SOT-223 package enables operation across -40 to +125°C automotive ambient without derating below the LED chain's minimum drive current.
おすすめ
Relay Replacement and Solid-State Switching
With its 600 V VDS and 120 mA ID, the BSP125H6327XTSA1 replaces electromechanical relays in low-current AC and DC switching applications such as thermostat controls, HVAC interface boards, and small appliance power stages. Configured as a low-side AC switch in series with a bridge rectifier load, it offers silent operation, no contact bounce, and unlimited mechanical life - critical for medical and instrumentation equipment. The 1.8 W power dissipation in SOT-223 supports continuous load currents up to ~100 mA without an external heatsink beyond the PCB tab copper pad.
おすすめ
Small Motor Control and Solenoid Drivers
The BSP125H6327XTSA1 drives small DC motors, solenoids, and valve actuators in industrial automation and appliance controls at currents below 120 mA. Its fast switching enables PWM speed control with audible-noise reduction, while the 600 V breakdown provides immunity to inductive flyback spikes when paired with a flyback diode. In stepper motor driver low-side positions, the SOT-223 tab manages the 1.8 W dissipation budget comfortably for continuous-duty cycle below 70%, and Infineon's SIPMOS process provides consistent VGS(th) for predictable current-sharing in paralleled configurations.
おすすめ
Offline (Mains-Referenced) Control Circuits
In offline switch-mode power supplies (SMPS) below 5 W output, the BSP125H6327XTSA1 serves as the primary-side start-up or auxiliary switch where its 600 V VDS comfortably exceeds the rectified 230 VAC peak (325 V). Placed in a high-side or low-side position with appropriate gate drive from a startup controller, it provides initial bias to the main controller IC before the auxiliary winding takes over. The 120 mA continuous current is sufficient for sub-2 W auxiliary rails in standby, while the SOT-223 footprint maintains the design's compact form factor.
おすすめ
Level Shifters and Signal Interface Switches
The BSP125H6327XTSA1 is well-suited for level shifting between 3.3 V microcontrollers and 5 V/12 V peripherals in mixed-signal designs, providing clean logic-level translation with its low R_DS(on) and fast transition times. In audio routing or test equipment multiplexing applications, the MOSFET acts as a low-distortion analog switch for signals below its 600 V limit - effectively transparent for audio-band signals. The SOT-223 package simplifies PCB layout compared to DPAK while providing better thermal stability than SOT-23 in continuous signal-path applications.
おすすめ
High-Side Load Switches in Industrial 24V/48V Systems
In industrial 24 V and 48 V bus architectures, the BSP125H6327XTSA1 functions as a high-side or low-side load switch for sensor power, indicator LEDs, and small actuator drivers. Its 600 V rating provides large transient safety margin beyond the bus voltage, useful for surge events and EFT immunity. The integrated SOT-223 tab enables up to 1.8 W dissipation, supporting continuous 100 mA loads in sensor-heater or LED-bar applications without thermal shutdown, and the part's automotive qualification translates to long-term reliability in industrial environments.
おすすめ
おすすめ製品の概要
エンジニアリング参考データ: BSP125H6327XTSA1 — 比較、設計ガイダンス、コンプライアンス情報。
選定ガイド
代替品との比較
| パラメータ | この製品 | BSP130H6327XTSA1 | BSP89H6327XTSA1 | BSR316PH6327XTSA1 |
|---|---|---|---|---|
| Package | PG-SOT223-4 (SOT-223) | PG-SOT223-4 (SOT-223) - same | PG-SOT223-4 (SOT-223) - same | PG-SOT223-4 (SOT-223) - same |
| Brand | Infineon Technologies | Infineon Technologies | Infineon Technologies | Infineon Technologies |
| Channel Type | N-Channel | N-Channel | N-Channel | P-Channel |
| Continuous Drain Current (ID) | 120 mA | ~300 mA (similar class) | ~250 mA | ~600 mA |
| Power Dissipation (PD) | 1.8 W | 1.8 W (same) | 1.8 W (same) | 1.8 W (same) |
| Technology | SIPMOS (N-Channel) | SIPMOS | SIPMOS | SIPMOS |
| Mounting Type | Surface Mount | Surface Mount | Surface Mount | Surface Mount |
| RoHS / MSL | RoHS / MSL-1 | RoHS / MSL-1 | RoHS / MSL-1 | RoHS / MSL-1 |
主な差別化要因
- 600 V VDS in a small SOT-223 footprint with full 1.8 W dissipation （vs BSP89H6327XTSA1 (240 V SOT-223))
- Higher 600 V rating than 2N7002-class small-signal MOSFETs （vs 2N7002 (SOT-23, 60 V))
- N-channel device for low-side switching vs P-channel complement （vs BSR316PH6327XTSA1 (P-channel SOT-223))
設計ノート
Estimated: At Ta=25°C on a minimum 100 mm² SOT-223 tab pad, the BSP125H6327XTSA1 supports up to 1.8 W dissipation, equivalent to ~120 mA at 15 V VDS in linear operation. For continuous switching at higher VDS or in ambient above 50°C, expand the copper pad to at least 200 mm² to keep theta_JA below 80°C/W. In pulse-mode applications the thermal mass allows short bursts above 1.8 W provided the average dissipation remains within SOA.
Place the BSP125H6327XTSA1 with its tab pad on the same net as the drain, and stitch the tab copper directly to a large pour for heat spreading. The gate trace should be kept short (<10 mm) and routed away from the drain to minimize Cgd-induced Miller coupling. A gate resistor of 10-100 Ω in series suppresses ringing, and a 100 kΩ pull-down to source ensures the MOSFET stays off during MCU reset.
Do not confuse SOT-223 (4 leads, with tab) pin numbering with SOT-23 (3 leads). The tab on BSP125H6327XTSA1 is internally bonded to the drain, so leaving it floating breaks the thermal path but does not affect the electrical drain. For high-voltage offline circuits, observe the drain-creepage distance of at least 4 mm on the PCB to avoid surface arcing above 400 V, and add a TVS diode across drain-source for inductive load protection.
コンプライアンス情報
RoHS and REACH compliant per Infineon product page. AEC-Q100 qualified for automotive use. Lead-free and halogen-free per Infineon's green product declaration.
