BSP88H6327XTSA1 vs BSD235CH6327XTSA1 比較
詳細な並列比較: BSP88H6327XTSA1 メーカー: Infineon および BSD235CH6327XTSA1 メーカー: Infineon。主要仕様、電気的特性、パッケージ、ライフサイクルステータス、価格、在庫状況を比較して、設計要件に最適な部品を判断してください。
Infineon
BSD235CH6327XTSA1 - 20V Complementary N+P MOSFET | Infineon OptiMOS™
BSD235CH6327XTSA1 ✓ 生産中仕様比較
| パラメータ | BSP88H6327XTSA1 | BSD235CH6327XTSA1 |
|---|---|---|
| ブランド | Infineon | Infineon |
| カテゴリ | MOSFETs | MOSFETs |
| ライフサイクル状態 | 有効 | 有効 |
| 在庫状況 | In Stock | In Stock |
| 単価（USD） | $0.21 | $0.12 |
| トランジスタタイプ | N-Channel MOSFET | — |
| Drain-Source Voltage (VDS) | 240 V | — |
| Continuous Drain Current (ID) | 350 mA at Ta=25 C | — |
| Power Dissipation (PD) | 1.8 W at Ta=25 C | — |
| パッケージ | PG-SOT223-4 (SOT-223-3) | — |
| 実装タイプ | Surface Mount | Surface Mount |
| On-State Resistance (RDS(on)) | 6 ohm typical at VGS=10 V | — |
| Configuration | Single | N+P complementary dual MOSFET |
| 動作温度 | -55 C to +150 C | — |
| Technology | SIPMOS (planar enhancement mode) | OptiMOS™ low-voltage |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: VGS(th) min/typ/max] | — |
| Automotive Qualification | AEC-Q101 qualified | — |
| Lead Plating | Pb-free | — |
| RoHS Compliance | Compliant | — |
| MSLレベル | [DATA_NEEDED: MSL level] | 1 |
| Total Gate Charge (Qg) | [DATA_NEEDED: total gate charge] | — |
| Input Capacitance (Ciss) | [DATA_NEEDED: Ciss] | — |
| Drain Tab Connection | SOT-223 tab is drain | — |
| Manufacturer | — | Infineon Technologies |
| Part Family | — | OptiMOS™ |
| Drain-to-Source Voltage (VDS) | — | 20 V |
| N-Channel Continuous Drain Current (ID) | — | 950 mA |
| P-Channel Continuous Drain Current (ID) | — | 530 mA (negative polarity) |
| Total Power Dissipation (Ptot) | — | 500 mW |
| Package Type | — | PG-SOT363-6-1 (SOT-363, 6-pin) |
| 動作温度範囲 | — | -55 °C to +150 °C (junction) |
| Polarity | — | N-channel + P-channel |
| Channel Mode | — | Enhancement |
| RoHS ステータス | — | Compliant (lead-free) |
| ピン数 | — | 6 |