BSS119NH6327XTSA1 vs BSS123NH6327XTSA1 比較
詳細な並列比較: BSS119NH6327XTSA1 メーカー: Infineon および BSS123NH6327XTSA1 メーカー: Infineon。主要仕様、電気的特性、パッケージ、ライフサイクルステータス、価格、在庫状況を比較して、設計要件に最適な部品を判断してください。
仕様比較
| パラメータ | BSS119NH6327XTSA1 | BSS123NH6327XTSA1 |
|---|---|---|
| ブランド | Infineon | Infineon |
| カテゴリ | MOSFETs | MOSFETs |
| ライフサイクル状態 | 有効 | 有効 |
| 在庫状況 | In Stock | In Stock |
| 単価（USD） | $0.12 | $0.09 |
| トランジスタタイプ | N-Channel MOSFET | — |
| FET Technology | Enhancement-mode, planar N-channel | — |
| Drain-Source Voltage (VDS) max | 100 V | — |
| Continuous Drain Current (ID) at TA=25°C | 190 mA | — |
| Power Dissipation (PD) at TA=25°C | 500 mW | — |
| Drain-Source On-Resistance (RDS(on)) max | 6 Ω (typical) [DATA_NEEDED: exact VGS condition and max value] | — |
| Gate Threshold Voltage (VGS(th)) | 0.8 V to 1.8 V (typical) [DATA_NEEDED: exact min/typ/max] | [DATA_NEEDED: typical and max VGS(th)] |
| Gate Drive Voltage (VGS) | ±20 V max | — |
| パッケージ | PG-SOT23 (SOT-23-3) | PG-SOT23 (SOT-23-3) |
| 実装タイプ | Surface Mount | Surface Mount |
| 動作温度範囲 | -55°C to +150°C (TJ) [DATA_NEEDED: TA range from datasheet] | -55 °C to +150 °C (junction) |
| Qualification | AEC-Q101 (automotive grade) | AEC-Q101 (automotive) |
| RoHS ステータス | Compliant | — |
| Lead-Free | Yes | — |
| Packaging | Tape & Reel (3,000 pcs/reel) | — |
| MSLレベル | 1 [DATA_NEEDED: confirm from datasheet] | 1 (per JEDEC J-STD-020) |
| Manufacturer | — | Infineon Technologies |
| Part Number | — | BSS123NH6327XTSA1 |
| Part Status | — | Active |
| FET Type | — | N-Channel, Enhancement Mode |
| Drain-Source Voltage (VDS) | — | 100 V |
| Continuous Drain Current (ID) | — | 190 mA (Ta) |
| Power Dissipation (PD) | — | 500 mW (Ta) |
| RDS(on) Max | — | 6 Ω @ VGS = 10 V |
| Gate-Source Voltage Max (VGS) | — | ±20 V |
| RoHS Compliance | — | Yes (Pb-free lead plating) |