BSS119NH6327XTSA1 vs BSS123NH6327XTSA1 Comparison

Detailed side-by-side comparison of BSS119NH6327XTSA1 by Infineon and BSS123NH6327XTSA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Infineon
BSS119NH6327XTSA1 BSS119NH6327XTSA1 - 100V N-Ch MOSFET, 190mA, SOT-23 | Infineon

BSS119NH6327XTSA1 - 100V N-Ch MOSFET, 190mA, SOT-23 | Infineon

BSS119NH6327XTSA1 βœ“ Active
Infineon
BSS123NH6327XTSA1 BSS123NH6327XTSA1 - 100V N-Ch MOSFET, 190mA | Infineon

BSS123NH6327XTSA1 - 100V N-Ch MOSFET, 190mA | Infineon

BSS123NH6327XTSA1 βœ“ Active

Specification Comparison

Parameter BSS119NH6327XTSA1 BSS123NH6327XTSA1
Brand Infineon Infineon
Category MOSFETs MOSFETs
Lifecycle Status Active Active
Stock Status In Stock In Stock
Unit Price (USD) $0.12 $0.09
Transistor Type N-Channel MOSFET β€”
FET Technology Enhancement-mode, planar N-channel β€”
Drain-Source Voltage (VDS) max 100 V β€”
Continuous Drain Current (ID) at TA=25Β°C 190 mA β€”
Power Dissipation (PD) at TA=25Β°C 500 mW β€”
Drain-Source On-Resistance (RDS(on)) max 6 Ξ© (typical) [DATA_NEEDED: exact VGS condition and max value] β€”
Gate Threshold Voltage (VGS(th)) 0.8 V to 1.8 V (typical) [DATA_NEEDED: exact min/typ/max] [DATA_NEEDED: typical and max VGS(th)]
Gate Drive Voltage (VGS) Β±20 V max β€”
Package PG-SOT23 (SOT-23-3) PG-SOT23 (SOT-23-3)
Mounting Type Surface Mount Surface Mount
Operating Temperature Range -55Β°C to +150Β°C (TJ) [DATA_NEEDED: TA range from datasheet] -55 Β°C to +150 Β°C (junction)
Qualification AEC-Q101 (automotive grade) AEC-Q101 (automotive)
RoHS Status Compliant β€”
Lead-Free Yes β€”
Packaging Tape & Reel (3,000 pcs/reel) β€”
MSL Level 1 [DATA_NEEDED: confirm from datasheet] 1 (per JEDEC J-STD-020)
Manufacturer β€” Infineon Technologies
Part Number β€” BSS123NH6327XTSA1
Part Status β€” Active
FET Type β€” N-Channel, Enhancement Mode
Drain-Source Voltage (VDS) β€” 100 V
Continuous Drain Current (ID) β€” 190 mA (Ta)
Power Dissipation (PD) β€” 500 mW (Ta)
RDS(on) Max β€” 6 Ξ© @ VGS = 10 V
Gate-Source Voltage Max (VGS) β€” Β±20 V
RoHS Compliance β€” Yes (Pb-free lead plating)

Datasheets & Resources

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