BSS816NWH6327XTSA1 vs BSS806NH6327XTSA1 比較
詳細な並列比較: BSS816NWH6327XTSA1 メーカー: Infineon および BSS806NH6327XTSA1 メーカー: Infineon。主要仕様、電気的特性、パッケージ、ライフサイクルステータス、価格、在庫状況を比較して、設計要件に最適な部品を判断してください。
仕様比較
| パラメータ | BSS816NWH6327XTSA1 | BSS806NH6327XTSA1 |
|---|---|---|
| ブランド | Infineon | Infineon |
| カテゴリ | MOSFETs | MOSFETs |
| ライフサイクル状態 | 有効 | 有効 |
| 在庫状況 | In Stock | In Stock |
| 単価（USD） | $0.14 | $0.19 |
| Manufacturer | Infineon Technologies | — |
| Part Family | BSS816NW (OptiMOS 2 Small-Signal) | — |
| トランジスタタイプ | MOSFET, N-Channel | — |
| Drain-Source Voltage (VDS) | 20 V | 20 V |
| Continuous Drain Current (ID) at TA=25C | 1.4 A | — |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: pulsed drain current] | [DATA_NEEDED: pulsed drain current] |
| Gate-Source Voltage (VGS) max | [DATA_NEEDED: VGS max] | — |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: VGS(th) typ/min/max] | — |
| RDS(on) max @ VGS=4.5V | 160 mOhm | — |
| RDS(on) max @ VGS=2.5V | [DATA_NEEDED: RDS(on) at 2.5V] | — |
| Power Dissipation (PD) at TA=25C | 500 mW | — |
| 動作温度範囲 | -55C to +150C | -55 C to +150 C (junction) |
| パッケージ | SOT-323 (PG-SOT323), 3-pin | PG-SOT23-3 (SOT-23-3) |
| 実装タイプ | Surface Mount | Surface Mount |
| Qualification | AEC-Q101 (Automotive) | — |
| Technology | OptiMOS 2 trench MOSFET | OptiMOS 2 (trench MOSFET) |
| ESD Protection | Yes (integrated, per Infineon datasheet) | — |
| RoHS / Lead-Free | RoHS compliant, lead-free | — |
| MSLレベル | 1 | 1 (per JEDEC J-STD-020) |
| FET Type | — | N-Channel |
| Continuous Drain Current (ID, Ta) | — | 2.3 A |
| Drain-Source On-Resistance (RDS(on) max) | — | 57 mΩ |
| Gate-Source Threshold Voltage (VGS(th)) | — | 1.8 V rated (logic level) |
| Gate Drive (recommended VGS) | — | 1.8 V to 10 V |
| Total Gate Charge (Qg) | — | [DATA_NEEDED: typical Qg] |
| Power Dissipation (PD, Ta) | — | 500 mW |
| RoHS ステータス | — | Compliant (Pb-free plating) |
| Automotive Qualification | — | AEC-Q101 qualified |