CGD65A055S2 vs CGD65A055SH2 比較
詳細な並列比較: CGD65A055S2 メーカー: Cambridge GaN Devices および CGD65A055SH2 メーカー: Cambridge GaN Devices。主要仕様、電気的特性、パッケージ、ライフサイクルステータス、価格、在庫状況を比較して、設計要件に最適な部品を判断してください。
Cambridge GaN Devices
CGD65A055S2 - 650V 55mΩ GaN HEMT with ICeGaN Gate | Cambridge GaN Devices
CGD65A055S2 ✓ 生産中仕様比較
| パラメータ | CGD65A055S2 | CGD65A055SH2 |
|---|---|---|
| ブランド | Cambridge GaN Devices | Cambridge GaN Devices |
| カテゴリ | Transistors | MOSFETs |
| ライフサイクル状態 | 有効 | 有効 |
| 在庫状況 | In Stock | In Stock |
| 単価（USD） | $2.85 | $7.40 |
| Manufacturer | Cambridge GaN Devices | — |
| Technology | GaN-on-Si HEMT (enhancement mode) | — |
| Drain-to-Source Voltage (VDS) | 650 V | — |
| On-Resistance (RDS(on)) | 55 mΩ | — |
| 連続ドレイン電流（TC=25°C） | 27 A | — |
| Gate Technology | ICeGaN™ (standard-driver compatible) | — |
| Current Sense Pin | Yes (integrated CS output) | — |
| Integrated Protection Circuit | NL³ (non-linear low-loss) | — |
| Reverse Recovery Charge (Qrr) | 0 nC (zero, typical for GaN) | — |
| パッケージ | 16-pin DFN 8x8 mm | 16-DFN (8x8 mm) |
| 実装タイプ | Surface Mount | Surface Mount |
| Channel Type | N-Channel | — |
| Operating Mode | Enhancement-mode (normally-off) | Enhancement-mode (normally-off) |
| RoHS ステータス | Compliant (lead-free) | — |
| Polarity | Single FET | N-Channel |
| Transistor Technology | — | Gallium Nitride (GaN-on-Si HEMT) |
| Drain-Source Voltage (VDS) | — | 650 V |
| Continuous Drain Current (ID, Tc=25°C) | — | 27 A |
| Static Drain-Source On-Resistance (RDS(on)) | — | 55 mΩ (typical, per family designation) |
| RDS(on) at specified ID/VGS | — | 77 mΩ at 2.2 A, VGS=12 V (per distributor data) |
| Gate Charge (Qg) | — | 4 nC at VGS=12 V |
| Gate-Source Voltage (VGS) Recommended | — | 12 V |
| Integrated Features | — | ICeGaN® Gate, Current Sense, NL³ Circuit |
| 動作接合温度 | — | -55 °C to +150 °C |
| 実装スタイル | — | SMD/SMT |
| Application Target | — | AC-DC PFC, server SMPS, EV charging, motor drive |
| RoHS / Lead-Free | — | RoHS Compliant, Lead-Free (per distributor listing) |