EPF10K250EBI600-3 vs EPF10K250EBC600-3 比較
詳細な並列比較: EPF10K250EBI600-3 メーカー: Intel および EPF10K250EBC600-3 メーカー: Intel。主要仕様、電気的特性、パッケージ、ライフサイクルステータス、価格、在庫状況を比較して、設計要件に最適な部品を判断してください。
仕様比較
| パラメータ | EPF10K250EBI600-3 | EPF10K250EBC600-3 |
|---|---|---|
| ブランド | Intel | Intel |
| カテゴリ | FPGA & CPLD | FPGA & CPLD |
| ライフサイクル状態 | ラストバイ | Obsolete |
| 在庫状況 | In Stock | In Stock |
| 単価（USD） | $110.00 | $205.00 |
| Family | FLEX 10KE | FLEX 10KE |
| Logic Elements | 12,160 | 12,160 LEs |
| Typical Gate Count | 250,000 system gates | — |
| Embedded System Blocks (ESBs) | 12 | — |
| Maximum User I/O | 470 | 470 |
| Dedicated Inputs | 4 | — |
| PLLs | 4 | — |
| On-chip RAM | Up to 40 Kbits | — |
| パッケージ | 600-ball BGA (HBGA) | 600-ball FineLine BGA |
| Ball Pitch | 1.93 mm | — |
| Core Voltage | 2.3 V (FLEX 10KE standard) [DATA_NEEDED: confirm exact VCCINT] | — |
| 動作温度 | Industrial, 0C to +85C [DATA_NEEDED: confirm -40C to +85C range] | [DATA_NEEDED: operating temperature range] |
| Speed Grade | -3 (fastest) | -3 |
| Process Technology | 0.22 µm CMOS, 4-layer metal | SRAM-based CMOS |
| Configuration Method | SRAM, requires external configuration device (EPC series) | — |
| 実装タイプ | Surface Mount | — |
| RoHS ステータス | Not specified (SnPb / tin-lead finish per legacy distributor listing) | — |
| Lead-free | no (legacy tin-lead per distributor description) | — |
| Typical Gates | — | 250,000 |
| Embedded Array Blocks (EABs) | — | 12 (each 2 Kbits) |
| Total Embedded Memory | — | 24 Kbits (RAM) |
| PLLs (Phase-Locked Loops) | — | 4 |
| Dedicated Clock Inputs | — | 6 |
| Core Supply Voltage | — | 3.3 V |
| I/O Supply Voltage | — | 3.3 V (5 V tolerant) |
| Configuration Mode | — | Passive Serial / Passive Parallel / JTAG |
| Boundary Scan | — | IEEE 1149.1 (JTAG) |