FDP030N06 vs IRFZ44NPBF 比較
詳細な並列比較: FDP030N06 メーカー: onsemi および IRFZ44NPBF メーカー: Infineon。主要仕様、電気的特性、パッケージ、ライフサイクルステータス、価格、在庫状況を比較して、設計要件に最適な部品を判断してください。
仕様比較
| パラメータ | FDP030N06 | IRFZ44NPBF |
|---|---|---|
| ブランド | onsemi | Infineon |
| カテゴリ | MOSFETs | MOSFETs |
| ライフサイクル状態 | 有効 | 有効 |
| 在庫状況 | In Stock | In Stock |
| 単価（USD） | $1.89 | $0.65 |
| FET Type | N-Channel MOSFET | N-Channel |
| Technology | PowerTrench (Trench) | HEXFET (Advanced Process) |
| Drain to Source Voltage (Vdss) | 60 V | — |
| Continuous Drain Current (Id) @ 25C | 120 A (Tc) | — |
| Continuous Drain Current (datasheet rating) | 193 A (Tc, datasheet title rating) | — |
| RDS(on) Max @ Id, Vgs | 3.2 mOhm | — |
| RDS(on) Typ | 2.6 mOhm | — |
| Power Dissipation (Tc) | 231 W (Tc) | — |
| Gate Drive Type | Standard level gate drive | — |
| Switching Speed | Fast | — |
| Gate Input Resistance | Low gate input resistance (low gate charge) | — |
| Avalanche Test | 100% avalanche tested | — |
| パッケージ | TO-220-3 (3+Tab) | TO-220AB (3-pin + tab) |
| 実装タイプ | Through Hole | Through Hole |
| Packing | Tube | — |
| Typical Applications | Power supply, switching applications | — |
| RoHS ステータス | [DATA_NEEDED: RoHS compliance status] | Compliant |
| Drain-to-Source Voltage (VDS) | — | 55 V |
| Continuous Drain Current (ID) at Tc=25C | — | 49 A |
| Continuous Drain Current (ID) at Tc=100C | — | [DATA_NEEDED: ID at Tc=100C] |
| Pulsed Drain Current (IDM) | — | [DATA_NEEDED: pulsed drain current] |
| Gate-to-Source Voltage (VGS) max | — | +/- 20 V |
| Static Drain-Source On-Resistance (RDS(on)) at VGS=10V | — | 17.5 mOhm |
| Total Gate Charge (Qg) | — | 42 nC |
| Power Dissipation (PD) at Tc=25C | — | 94 W |
| Thermal Resistance Junction-to-Case (RthJC) | — | 1.0 C/W |
| Thermal Resistance Junction-to-Ambient (RthJA) | — | 62 C/W |
| 動作接合温度 | — | -55C to +175C |
| Avalanche Energy Rating (EAS) | — | [DATA_NEEDED: EAS rating] |