FDP030N06 vs IRFZ44NPBF 对比

详细并排对比 FDP030N06 出自 onsemi 和 IRFZ44NPBF 出自 Infineon。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况,以确定最适合您设计需求的元器件。

规格对比

参数 FDP030N06 IRFZ44NPBF
品牌 onsemi Infineon
分类 MOSFETs MOSFETs
生命周期状态 有效 有效
库存状态 有库存 有库存
单价(USD) $1.89 $0.65
FET Type N-Channel MOSFET N-Channel
Technology PowerTrench (Trench) HEXFET (Advanced Process)
Drain to Source Voltage (Vdss) 60 V —
Continuous Drain Current (Id) @ 25C 120 A (Tc) —
Continuous Drain Current (datasheet rating) 193 A (Tc, datasheet title rating) —
RDS(on) Max @ Id, Vgs 3.2 mOhm —
RDS(on) Typ 2.6 mOhm —
Power Dissipation (Tc) 231 W (Tc) —
Gate Drive Type Standard level gate drive —
Switching Speed Fast —
Gate Input Resistance Low gate input resistance (low gate charge) —
Avalanche Test 100% avalanche tested —
封装 TO-220-3 (3+Tab) TO-220AB (3-pin + tab)
安装类型 Through Hole Through Hole
Packing Tube —
Typical Applications Power supply, switching applications —
RoHS 状态 [DATA_NEEDED: RoHS compliance status] Compliant
Drain-to-Source Voltage (VDS) — 55 V
Continuous Drain Current (ID) at Tc=25C — 49 A
Continuous Drain Current (ID) at Tc=100C — [DATA_NEEDED: ID at Tc=100C]
Pulsed Drain Current (IDM) — [DATA_NEEDED: pulsed drain current]
Gate-to-Source Voltage (VGS) max — +/- 20 V
Static Drain-Source On-Resistance (RDS(on)) at VGS=10V — 17.5 mOhm
Total Gate Charge (Qg) — 42 nC
Power Dissipation (PD) at Tc=25C — 94 W
Thermal Resistance Junction-to-Case (RthJC) — 1.0 C/W
Thermal Resistance Junction-to-Ambient (RthJA) — 62 C/W
工作结温 — -55C to +175C
Avalanche Energy Rating (EAS) — [DATA_NEEDED: EAS rating]

数据手册与资源

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