FDV301N vs BSS138LT1G 比較
詳細な並列比較: FDV301N メーカー: onsemi および BSS138LT1G メーカー: onsemi。主要仕様、電気的特性、パッケージ、ライフサイクルステータス、価格、在庫状況を比較して、設計要件に最適な部品を判断してください。
仕様比較
| パラメータ | FDV301N | BSS138LT1G |
|---|---|---|
| ブランド | onsemi | onsemi |
| カテゴリ | MOSFETs | MOSFETs |
| ライフサイクル状態 | 有効 | 有効 |
| 在庫状況 | In Stock | In Stock |
| 単価（USD） | $0.08 | $0.08 |
| トランジスタタイプ | N-Channel Enhancement Mode MOSFET (Digital FET) | N-Channel MOSFET |
| Drain-Source Voltage (Vdss) | 25 V | — |
| Continuous Drain Current (Id) | 220 mA (Ta) | — |
| Peak Drain Current | 0.5 A | — |
| RDS(on) at VGS = 2.7 V | 5 ohm (typical) | — |
| RDS(on) typical | 4 ohm | — |
| Power Dissipation (Pd) | 350 mW (Ta) | — |
| Technology | High cell density DMOS | — |
| Gate Drive Type | Logic level (no bias resistors required) | — |
| 実装タイプ | Surface Mount | Surface Mount |
| パッケージ | SOT-23-3 | SOT-23-3 (TO-236) |
| 動作温度 | [DATA_NEEDED: operating temperature range] | [DATA_NEEDED: operating temperature range] |
| Gate-Source Voltage (Vgs) Max | [DATA_NEEDED: maximum gate-source voltage] | — |
| Gate Charge (Qg) | [DATA_NEEDED: total gate charge] | — |
| Input Capacitance (Ciss) | [DATA_NEEDED: input capacitance] | — |
| Thermal Resistance (RthJA) | [DATA_NEEDED: thermal resistance junction to ambient] | — |
| RoHS ステータス | [DATA_NEEDED: RoHS compliance status] | Compliant (RoHS Compliant and Pb-free per Easybom) |
| MSLレベル | [DATA_NEEDED: moisture sensitivity level] | — |
| Drain-Source Voltage (VDS) | — | 50 V |
| Continuous Drain Current (ID) | — | 200 mA (Ta) |
| Power Dissipation (PD) | — | 225 mW (Ta) |
| On-Resistance Max (RDS(on)) | — | 3.5 ohm |
| Gate Threshold Voltage (VGS(th)) | — | [DATA_NEEDED: gate threshold voltage] |
| Gate-Source Voltage Max (VGS) | — | [DATA_NEEDED: maximum gate-source voltage] |
| Configuration | — | Single FET |
| Channel Mode | — | Enhancement Mode |
| Product Family | — | BSS138LT Series Small Signal MOSFET |
| Typical Applications | — | Computers, printers, cordless phones, DC-DC converters |