FDV301N vs BSS138LT1G 비교
다음의 상세 나란히 비교: FDV301N 제조: onsemi 및 BSS138LT1G 제조: onsemi. 주요 사양, 전기적 파라미터, 패키징, 수명 주기 상태, 가격 및 재고를 비교하여 설계 요구 사항에 가장 적합한 부품을 결정하십시오.
사양 비교
| 파라미터 | FDV301N | BSS138LT1G |
|---|---|---|
| 브랜드 | onsemi | onsemi |
| 카테고리 | MOSFETs | MOSFETs |
| 수명 주기 상태 | 활성 | 활성 |
| 재고 상태 | In Stock | In Stock |
| 단가 (USD) | $0.08 | $0.08 |
| 트랜지스터 유형 | N-Channel Enhancement Mode MOSFET (Digital FET) | N-Channel MOSFET |
| Drain-Source Voltage (Vdss) | 25 V | — |
| Continuous Drain Current (Id) | 220 mA (Ta) | — |
| Peak Drain Current | 0.5 A | — |
| RDS(on) at VGS = 2.7 V | 5 ohm (typical) | — |
| RDS(on) typical | 4 ohm | — |
| Power Dissipation (Pd) | 350 mW (Ta) | — |
| Technology | High cell density DMOS | — |
| Gate Drive Type | Logic level (no bias resistors required) | — |
| 실장 유형 | Surface Mount | Surface Mount |
| 패키지 | SOT-23-3 | SOT-23-3 (TO-236) |
| 동작 온도 | [DATA_NEEDED: operating temperature range] | [DATA_NEEDED: operating temperature range] |
| Gate-Source Voltage (Vgs) Max | [DATA_NEEDED: maximum gate-source voltage] | — |
| Gate Charge (Qg) | [DATA_NEEDED: total gate charge] | — |
| Input Capacitance (Ciss) | [DATA_NEEDED: input capacitance] | — |
| Thermal Resistance (RthJA) | [DATA_NEEDED: thermal resistance junction to ambient] | — |
| RoHS 상태 | [DATA_NEEDED: RoHS compliance status] | Compliant (RoHS Compliant and Pb-free per Easybom) |
| MSL 레벨 | [DATA_NEEDED: moisture sensitivity level] | — |
| Drain-Source Voltage (VDS) | — | 50 V |
| Continuous Drain Current (ID) | — | 200 mA (Ta) |
| Power Dissipation (PD) | — | 225 mW (Ta) |
| On-Resistance Max (RDS(on)) | — | 3.5 ohm |
| Gate Threshold Voltage (VGS(th)) | — | [DATA_NEEDED: gate threshold voltage] |
| Gate-Source Voltage Max (VGS) | — | [DATA_NEEDED: maximum gate-source voltage] |
| Configuration | — | Single FET |
| Channel Mode | — | Enhancement Mode |
| Product Family | — | BSS138LT Series Small Signal MOSFET |
| Typical Applications | — | Computers, printers, cordless phones, DC-DC converters |