GD3162 vs GD3160 比較

詳細な並列比較: GD3162 メーカー: NXP Semiconductors および GD3160 メーカー: NXP Semiconductors。主要仕様、電気的特性、パッケージ、ライフサイクルステータス、価格、在庫状況を比較して、設計要件に最適な部品を判断してください。

NXP Semiconductors
GD3162 GD3162 - Isolated IGBT/SiC Gate Driver with SPI | NXP

GD3162 - Isolated IGBT/SiC Gate Driver with SPI | NXP

GD3162 ✓ 生産中

仕様比較

パラメータ GD3162 GD3160
ブランド NXP Semiconductors NXP Semiconductors
カテゴリ Power MOSFET Drivers Power MOSFET Drivers
ライフサイクル状態 有効 有効
在庫状況 In Stock In Stock
単価(USD) $0.00 $0.00
Product Type Advanced galvanically isolated single-channel IGBT/SiC gate driver Single-channel isolated gate driver for IGBT and SiC MOSFETs
Isolation Type Galvanic isolation (integrated) Integrated galvanic isolation
Number of Channels 1 1
Target Power Devices SiC MOSFET and IGBT/SiC modules —
Dynamic Gate Strength Adjust Yes, via SPI or GS Enable pins —
Integrated Boost Capability Yes —
Configuration Interface SPI (programmable) SPI (programmable)
Protection Features Overtemperature, desaturation (DESAT), current sense —
Fault Management Autonomous, with fault and status reporting —
Primary Application xEV traction inverters xEV traction inverters, OBC, DC-DC converters
パッケージ [DATA_NEEDED: package type] [DATA_NEEDED: exact package code]
最大出力電流 [DATA_NEEDED: peak source/sink current] —
Isolation Voltage [DATA_NEEDED: isolation rating] [DATA_NEEDED: isolation voltage]
Supply Voltage Range [DATA_NEEDED: supply voltage range] —
動作温度 [DATA_NEEDED: operating temperature range] —
Switching Speed Tuning Programmable gate drive shaping —
Output Stage — Low on-resistance drive transistors, rail-to-rail gate control
Peak Source Current — [DATA_NEEDED: peak source current]
Peak Sink Current — [DATA_NEEDED: peak sink current]
Desaturation Protection — Yes (programmable)
Overtemperature Protection — Yes (programmable)
Current Sense Protection — Yes (programmable)
Functional Safety Support — Yes (per NXP product page)
実装タイプ — Surface Mount
動作温度範囲 — [DATA_NEEDED: operating temperature range]

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