GD3162 vs GD3160 비교

다음의 상세 나란히 비교: GD3162 제조: NXP Semiconductors 및 GD3160 제조: NXP Semiconductors. 주요 사양, 전기적 파라미터, 패키징, 수명 주기 상태, 가격 및 재고를 비교하여 설계 요구 사항에 가장 적합한 부품을 결정하십시오.

NXP Semiconductors
GD3162 GD3162 - Isolated IGBT/SiC Gate Driver with SPI | NXP

GD3162 - Isolated IGBT/SiC Gate Driver with SPI | NXP

GD3162 ✓ 활성

사양 비교

파라미터 GD3162 GD3160
브랜드 NXP Semiconductors NXP Semiconductors
카테고리 Power MOSFET Drivers Power MOSFET Drivers
수명 주기 상태 활성 활성
재고 상태 In Stock In Stock
단가 (USD) $0.00 $0.00
Product Type Advanced galvanically isolated single-channel IGBT/SiC gate driver Single-channel isolated gate driver for IGBT and SiC MOSFETs
Isolation Type Galvanic isolation (integrated) Integrated galvanic isolation
Number of Channels 1 1
Target Power Devices SiC MOSFET and IGBT/SiC modules —
Dynamic Gate Strength Adjust Yes, via SPI or GS Enable pins —
Integrated Boost Capability Yes —
Configuration Interface SPI (programmable) SPI (programmable)
Protection Features Overtemperature, desaturation (DESAT), current sense —
Fault Management Autonomous, with fault and status reporting —
Primary Application xEV traction inverters xEV traction inverters, OBC, DC-DC converters
패키지 [DATA_NEEDED: package type] [DATA_NEEDED: exact package code]
최대 출력 전류 [DATA_NEEDED: peak source/sink current] —
Isolation Voltage [DATA_NEEDED: isolation rating] [DATA_NEEDED: isolation voltage]
Supply Voltage Range [DATA_NEEDED: supply voltage range] —
동작 온도 [DATA_NEEDED: operating temperature range] —
Switching Speed Tuning Programmable gate drive shaping —
Output Stage — Low on-resistance drive transistors, rail-to-rail gate control
Peak Source Current — [DATA_NEEDED: peak source current]
Peak Sink Current — [DATA_NEEDED: peak sink current]
Desaturation Protection — Yes (programmable)
Overtemperature Protection — Yes (programmable)
Current Sense Protection — Yes (programmable)
Functional Safety Support — Yes (per NXP product page)
실장 유형 — Surface Mount
동작 온도 범위 — [DATA_NEEDED: operating temperature range]

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