IAUC100N04S6L025ATMA1 vs IPG20N04S4L08ATMA1 比較
詳細な並列比較: IAUC100N04S6L025ATMA1 メーカー: Infineon および IPG20N04S4L08ATMA1 メーカー: Infineon。主要仕様、電気的特性、パッケージ、ライフサイクルステータス、価格、在庫状況を比較して、設計要件に最適な部品を判断してください。
Infineon
IPG20N04S4L08ATMA1 - Dual N-Ch 40V 20A 8.2mΩ OptiMOS-T2 | Infineon
IPG20N04S4L08ATMA1 ✓ 生産中仕様比較
| パラメータ | IAUC100N04S6L025ATMA1 | IPG20N04S4L08ATMA1 |
|---|---|---|
| ブランド | Infineon | Infineon |
| カテゴリ | MOSFETs | MOSFETs |
| ライフサイクル状態 | 有効 | 有効 |
| 在庫状況 | In Stock | In Stock |
| 単価（USD） | $0.62 | $0.89 |
| Technology | OptiMOS 6 40V trench MOSFET | — |
| Polarity | N-Channel | — |
| Drain-Source Voltage (VDS) | 40 V | — |
| Continuous Drain Current (ID) at TC=25C | 100 A | — |
| Continuous Drain Current (ID) at TC=100C | [DATA_NEEDED: ID at TC=100C] | — |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: IDM pulse rating] | — |
| On-State Resistance RDS(on) max at VGS=10V | 2.5 mOhm | — |
| Gate-Source Threshold Voltage (VGS(th)) | [DATA_NEEDED: VGS(th) typ/min/max] | — |
| Total Gate Charge (Qg) | [DATA_NEEDED: Qg total] | — |
| Power Dissipation (PD) at TC=25C | 62 W | — |
| 動作接合温度 | -55 C to +175 C | — |
| パッケージ | PG-TDSON-8 (SuperSO8 5x6 mm) | — |
| 実装タイプ | Surface Mount | Surface Mount |
| Automotive Qualification | AEC-Q101 qualified | — |
| MSLレベル | 1 (per JEDEC J-STD-020) | MSL1 (per JEDEC J-STD-020, up to 260°C peak reflow) |
| RoHS ステータス | Compliant | — |
| Lead-Free | Yes | — |
| Manufacturer | — | Infineon Technologies |
| Part Number | — | IPG20N04S4L08ATMA1 |
| FET Type | — | 2 N-Channel (Dual) |
| FET Feature | — | Logic Level Gate |
| Drain-to-Source Voltage (Vdss) | — | 40 V |
| Continuous Drain Current (Id) @ 25°C | — | 20 A |
| On-Resistance Rds(on) max @ Vgs=10V, Id=17A | — | 8.2 mΩ |
| Power Dissipation (Pd) | — | 54 W |
| 動作温度 | — | -55°C to +175°C |
| パッケージ / ケース | — | PG-TDSON-8-4 (TDSON-8) |
| Series | — | OptiMOS™-T2, Automotive, AEC-Q101 |
| Avalanche Tested | — | 100% Avalanche Tested |
| RoHS / Green | — | RoHS Compliant, Green Product |
| Part Status | — | Active |