IPG20N04S4L08ATMA1 - Dual N-Ch 40V 20A 8.2mΩ OptiMOS-T2 | Infineon
部品番号: IPG20N04S4L08ATMA1 ✓ 生産中| 数量 | 単価 | 小計 |
|---|---|---|
| 1 | $1.85 | $1.85 |
| 10 | $1.62 | $16.20 |
| 100 | $1.28 | $128.00 |
| 500 | $1.05 | $525.00 |
| 1,000 | $0.89 | $890.00 |
IPG20N04S4L08ATMA1 概要
A MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) is a voltage-controlled semiconductor switch used for power conversion, motor control, and load management. Logic-level MOSFETs accept standard 4.5 V – 10 V gate drive directly from microcontrollers or gate drivers without needing a charge pump. MOSFET arrays like the IPG20N04S4L08ATMA1 sit inside the hierarchy: MOSFET -> power MOSFET -> N-channel enhancement MOSFET -> dual MOSFET array -> OptiMOS family -> automotive-grade power transistor.
Key features of this device include a low typical gate charge Qg for fast switching, 100% avalanche-tested dice for ruggedness, AEC-Q101 qualification for automotive reliability, MSL1 moisture sensitivity up to 260°C peak reflow, and a logic-level gate threshold that enables direct drive from 5 V logic. The exposed-drain pad (PG-TDSON-8-4) provides a low thermal-resistance path from junction to PCB copper.
The OptiMOS-T2 cell geometry reduces RDSon per silicon area and minimizes gate charge, improving both conduction and switching losses. This architecture is particularly efficient in 12 V automotive and 24 V industrial systems where low on-resistance directly translates into cooler operation and longer battery life. The dual-die monolithic construction ensures matched Rds(on) and Qg between the two channels, simplifying synchronous-rectifier or half-bridge designs.
Typical applications include automotive electronic control units (ECUs), brushless DC (BLDC) motor drivers, solenoid and valve drivers, LED lighting drivers, DC-DC converter synchronous rectification, and battery-management system (BMS) protection circuits. Its AEC-Q101 qualification makes it a strong fit for under-hood and chassis electronics where long-term reliability is mandatory.
When designing with this part, ensure that the gate-drive voltage does not exceed the absolute maximum VGS of ±20 V and that adequate PCB copper area is provided under the thermal pad. Because the two MOSFETs share a common-source lead on certain pins, verify pin assignments against your controller's high-side/low-side drive pattern before laying out the schematic.
This page synthesizes distributor pricing, drop-in alternatives, and practical design notes not found in the manufacturer datasheet.
ドロップイン代替品: IPG20N04S4L08ATMA1 — 同一パッケージでピン互換。PCBの作り直しが必要な異なるパッケージの部品は除外されています。
このシリーズのバリエーション
同一シリーズでドロップイン互換のモデル: IPG20N04S4L08ATMA1 （同一形状・フットプリント） — 相違点: Technology, Package, MSL Level, FET Type, Automotive Qualification.
クイック比較ツール — 並列比較する代替部品を選択:
IPG20N04S4L-07AATMA1
✅ ドロップイン ⚠️ 仕様未検証📋 参考代替品（カタログ未掲載）
IPG20N04S4L-10ATMA1
✅ ドロップイン ⚠️ 仕様未検証📋 参考代替品（カタログ未掲載）
IPG20N04S4L08AATMA1
✅ ドロップイン✓ 在庫あり
$0.66 / 個
データシートを見る →IPG20N04S4-08ATMA1
✅ ドロップイン ⚠️ 仕様未検証📋 参考代替品（カタログ未掲載）
NVMFD5C470NL
✅ ドロップイン📋 参考代替品（カタログ未掲載）
IPG20N04S4L08ATMA1 最大定格＆電気的特性
| Manufacturer | Infineon Technologies |
| Part Number | IPG20N04S4L08ATMA1 |
| FET Type | 2 N-Channel (Dual) |
| FET Feature | Logic Level Gate |
| Drain-to-Source Voltage (Vdss) | 40 V |
| Continuous Drain Current (Id) @ 25°C | 20 A |
| On-Resistance Rds(on) max @ Vgs=10V, Id=17A | 8.2 mΩ |
| Power Dissipation (Pd) | 54 W |
| 動作温度 | -55°C to +175°C |
| パッケージ / ケース | PG-TDSON-8-4 (TDSON-8) |
| 実装タイプ | Surface Mount |
| Series | OptiMOS™-T2, Automotive, AEC-Q101 |
| MSLレベル | MSL1 (per JEDEC J-STD-020, up to 260°C peak reflow) |
| Avalanche Tested | 100% Avalanche Tested |
| RoHS / Green | RoHS Compliant, Green Product |
| Part Status | Active |
IPG20N04S4L08ATMA1 ピン構成
| ピン 1 | S1 — Source 1 (low-side switch 1) |
| ピン 2 | S1 — Source 1 (low-side switch 1) |
| ピン 3 | S1 — Source 1 (low-side switch 1) |
| ピン 4 | G1 — Gate 1 (logic-level input) |
| ピン 5 | G2 — Gate 2 (logic-level input) |
| ピン 6 | S2 — Source 2 (low-side switch 2) |
| ピン 7 | S2 — Source 2 (low-side switch 2) |
| ピン 8 | S2 — Source 2 (low-side switch 2) |
主な用途
IPG20N04S4L08ATMA1 の用途: 6 件s: Automotive ECU Power Stage, Brushless DC (BLDC) Motor Driver Half-Bridge, Solenoid and Valve Driver, Synchronous Rectification in DC-DC Converters, LED Lighting Driver (Automotive), Battery Management System (BMS) Protection.
Automotive ECU Power Stage
The IPG20N04S4L08ATMA1 suits 12 V automotive ECU power stages because of its AEC-Q101 qualification, 40 V Vdss for load-dump headroom, and 20 A continuous current per channel. Its dual topology provides two switches in one PG-TDSON-8-4 footprint, allowing designers to replace multiple DPAK packages and shrink the ECU PCB. With 8.2 mΩ max Rds(on) at 10 V VGS, conduction losses stay low across typical 5-15 A ECU loads. Logic-level gate drive enables direct connection to 5 V microcontrollers without external gate drivers, simplifying BOM and reducing quiescent draw on standby rails.
おすすめ
Brushless DC (BLDC) Motor Driver Half-Bridge
In BLDC motor drivers, the IPG20N04S4L08ATMA1 provides one high-side and one low-side switch per phase in a single PG-TDSON-8-4 package, so three parts form a complete three-phase inverter. The matched RDs(on) and Qg between channels ensure symmetric switching, which is critical to minimize torque ripple and acoustic noise. The 20 A continuous rating comfortably handles motor currents up to ~15 A continuous with proper PCB thermal design, while 40 V Vdss tolerates 12 V battery transients including load-dump pulses. Logic-level gate threshold simplifies gate-driver selection for 5 V or 3.3 V MCU PWM outputs.
おすすめ
Solenoid and Valve Driver
The IPG20N04S4L08ATMA1 drives automotive solenoids, transmission valves, and fuel injectors efficiently thanks to its low 8.2 mΩ Rds(on) and 20 A continuous current per channel. Two channels per package allow dual-solenoid drive in a compact module, halving PCB area compared to two discrete DPAK parts. Logic-level gates accept direct drive from ECU microcontrollers, eliminating gate-driver stages for simple on/off solenoid control. AEC-Q101 qualification and 175°C max junction temperature ensure reliability under the thermal stress of under-hood transmission and engine-bay mounting.
おすすめ
Synchronous Rectification in DC-DC Converters
In 12 V-to-low-voltage buck converters, the IPG20N04S4L08ATMA1 serves as a synchronous rectifier pair, replacing Schottky diodes to cut conduction losses by half and improve efficiency 2-4% at full load. The 40 V rating provides ample headroom for 12 V battery transients, while 8.2 mΩ Rds(on) at 10 V VGS keeps synchronous-rectifier conduction losses low at 5-15 A loads. The dual-die topology halves the loop inductance between high-side and low-side switches, reducing switching ringing and EMI. Logic-level gates simplify low-voltage converter designs operating from a 5 V bias rail.
おすすめ
LED Lighting Driver (Automotive)
The IPG20N04S4L08ATMA1 drives high-brightness automotive LED headlights, daytime running lights, and interior lighting modules. Its dual N-channel topology enables buck or boost LED-driver topologies where two switches manage current regulation. With 20 A current handling and 8.2 mΩ Rds(on), it dissipates minimal power even at high LED string currents, reducing thermal stress and eliminating bulky heatsinks. AEC-Q101 qualification and 175°C max junction temperature are critical for sealed headlamp modules where ambient temperatures exceed 100°C and reliability must match vehicle lifetime.
おすすめ
Battery Management System (BMS) Protection
The IPG20N04S4L08ATMA1 is well suited for BMS protection FETs in 12 V and 24 V battery packs, providing dual N-channel switches for charge and discharge paths in one PG-TDSON-8-4 footprint. The 40 V Vdss comfortably exceeds the maximum pack voltage with margin for transients, and 8.2 mΩ Rds(on) minimizes voltage drop and self-heating during high-current charge/discharge cycles. AEC-Q101 qualification is essential for automotive battery applications. Logic-level gates allow direct drive from low-voltage BMS AFE chips, reducing gate-driver complexity and standby current.
おすすめ
おすすめ製品の概要
エンジニアリング参考データ: IPG20N04S4L08ATMA1 — 比較、設計ガイダンス、コンプライアンス情報。
選定ガイド
代替品との比較
| パラメータ | この製品 | IPG20N04S4L-07AATMA1 | IPG20N04S4L-10ATMA1 | IPG20N04S4L08AATMA1 | IPG20N04S4-08ATMA1 | NVMFD5C470NL |
|---|---|---|---|---|---|---|
| Brand | Infineon | Infineon | Infineon | Infineon | Infineon | onsemi |
| Package | PG-TDSON-8-4 | PG-TDSON-8-4 - same | PG-TDSON-8-4 - same | PG-TDSON-8-4 - same | PG-TDSON-8-4 - same | PG-TDSON-8-4 (DFN-8 equiv) - same |
| Drain-to-Source Voltage (Vdss) | 40 V | 40 V | 40 V | 40 V | 40 V | 40 V |
| Max On-Resistance Rds(on) @ Vgs=10V | 8.2 mΩ | ~7 mΩ (lower) | ~10 mΩ (higher) | 8.2 mΩ (identical) | ~8 mΩ | ~47 mΩ (much higher) |
| Gate Drive Level | Logic Level (4.5V-10V) | Logic Level | Logic Level | Logic Level | Standard Level (higher Vgs(th)) | Logic Level |
| AEC-Q101 Automotive Qualified | Yes | Yes | Yes | Yes | Yes | Yes |
主な差別化要因
- Dual N-channel in single PG-TDSON-8-4 footprint （vs Single-channel DPAK (e.g., IPD90N03S4L-04))
- AEC-Q101 automotive qualification （vs Industrial-grade NVMFS5C460NL (onsemi))
- Logic-level gate drive at 4.5V-10V VGS （vs Standard-level IPG20N04S4-08ATMA1)
設計ノート
At maximum continuous drain current of 20 A and Rds(on) of 8.2 mΩ, conduction losses reach approximately P = I² × R = 20² × 0.0082 = 3.28 W per channel, or 6.56 W for both channels. The PG-TDSON-8-4 exposed pad requires substantial copper pour underneath - at least 1 square inch on top layer plus thermal vias to inner planes - to keep junction temperature rise acceptable. Without adequate copper, theta_JA rises rapidly and the device may exceed its 175°C Tj max at high ambient temperatures. For continuous 20 A operation in sealed enclosures, parallel multiple parts or downgrade to the L-07 variant for lower Rds(on).
Place the IPG20N04S4L08ATMA1 so that the drain-exposed thermal pad connects to a continuous copper plane on the top layer with an array of thermal vias (typically 9-16 vias, 0.3 mm drill, 1 mm pitch) to inner ground/power planes. Keep gate-trace impedance low by using 0.2 mm traces with ground-side shielding. Source connections should use wide copper pours to minimize parasitic inductance in switching loops. For half-bridge layouts, place the high-side and low-side switches as close as possible to minimize the power-loop inductance, which directly impacts switching losses and EMI.
Do not exceed the absolute maximum gate-to-source voltage of ±20 V; even brief transients above this will damage the gate oxide. The logic-level gate variant (L08 suffix) is optimized for VGS = 4.5V-10V drive - if you need standard 10V-12V drive from a gate-driver IC, consider the non-logic-level variant (IPG20N04S4-08). Always verify the pinout of the dual-die device matches your schematic - source pins are grouped 1-2-3 and 6-7-8, while gates are on pins 4 and 5, and the exposed pad is the common drain for both MOSFETs.
For BLDC motor inverter layouts using three IPG20N04S4L08ATMA1 parts (one per phase), arrange them symmetrically around the motor connector with balanced trace lengths for all three phases. This minimizes phase-to-phase timing skew and reduces circulating currents. Use a star-ground topology from the DC-link bulk capacitors to the source pins of each part, rather than daisy-chained grounds, to prevent ground bounce from corrupting gate-drive signals. Add 10 kΩ gate-source pull-down resistors on each gate to prevent inadvertent turn-on during MCU reset or power-up sequences.
The fast switching edges of the IPG20N04S4L08ATMA1 (low Qg enables <20 ns rise times) can generate ringing and EMI if the gate-drive loop and power-loop inductances are not minimized. Use a gate-drive resistor (typically 10-47 Ω) to slow the rise/fall time and damp ringing, trading switching loss for EMI compliance. Place a small RC snubber (e.g., 10 Ω + 1 nF) across drain-source of each MOSFET in noisy environments, and consider a TVS diode on the DC bus to clamp load-dump transients in automotive 12V systems.
コンプライアンス情報
AEC-Q101 qualified (automotive grade). MSL1 per JEDEC J-STD-020 with peak reflow up to 260°C. RoHS compliant and Green Product per Infineon datasheet. Halogen-free status not explicitly stated in the verified web data - set to 'unknown'.
