IAUC100N04S6N028ATMA1 vs IAUCN04S7L050HATMA1 比較
詳細な並列比較: IAUC100N04S6N028ATMA1 メーカー: Infineon および IAUCN04S7L050HATMA1 メーカー: Infineon。主要仕様、電気的特性、パッケージ、ライフサイクルステータス、価格、在庫状況を比較して、設計要件に最適な部品を判断してください。
仕様比較
| パラメータ | IAUC100N04S6N028ATMA1 | IAUCN04S7L050HATMA1 |
|---|---|---|
| ブランド | Infineon | Infineon |
| カテゴリ | MOSFETs | MOSFETs |
| ライフサイクル状態 | 有効 | 有効 |
| 在庫状況 | In Stock | In Stock |
| 単価（USD） | $0.42 | $0.83 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Series | OptiMOS 6 40V | OptiMOS™ 7 |
| FET Type | N-Channel | — |
| Technology | MOSFET (Metal Oxide) | Trench MOSFET, OptiMOS™ 7 40V |
| Drain-Source Voltage (V_DS) | 40 V | — |
| Continuous Drain Current (I_D) at T_C=25°C | 100 A | — |
| Pulsed Drain Current (I_DM) | 400 A | — |
| R_DS(on) max @ V_GS=10V | 2.8 mΩ (typical) | — |
| Gate Threshold Voltage (V_GS(th)) | 1.5 V to 2.5 V | — |
| Total Gate Charge (Q_g) | [DATA_NEEDED: Q_g in nC] | — |
| Power Dissipation (P_D) at T_C=25°C | 62 W | — |
| 動作温度範囲 | -55 °C to +175 °C | — |
| パッケージ | PG-TDSON-8 (TDSON-8) | PG-TDSON-8-57 (SuperSO8 half-bridge) |
| 実装タイプ | Surface Mount | Surface Mount |
| Automotive Qualified | Yes | — |
| RoHS ステータス | Compliant | Compliant |
| Configuration | — | Dual N-Channel (Dual Drain, Half-Bridge) |
| Drain-Source Voltage (VDS) | — | 40 V |
| Continuous Drain Current (ID), Tc=25°C | — | 65 A |
| Pulsed Drain Current (IDM) | — | [DATA_NEEDED: pulsed drain current] |
| On-Resistance RDS(on) max @ VGS=10V | — | 5.04 mΩ |
| Gate-Source Voltage (VGS) max | — | ±20 V |
| Gate Threshold Voltage (VGS(th)) | — | [DATA_NEEDED: gate threshold voltage] |
| Total Gate Charge (Qg) | — | [DATA_NEEDED: total gate charge] |
| Power Dissipation (PD) @ Tc=25°C | — | 40 W |
| 動作接合温度 | — | -55 °C to +175 °C |
| MSLレベル | — | 1 (per JEDEC J-STD-020) |
| Automotive Qualification | — | AEC-Q101 (family-level, automotive grade) |