IAUCN04S7L050HATMA1 - 40V Dual N-Ch OptiMOS 7, 5.04mΩ | Infineon
部品番号: IAUCN04S7L050HATMA1 ✓ 生産中| 数量 | 単価 | 小計 |
|---|---|---|
| 1 | $1.92 | $1.92 |
| 10 | $1.73 | $17.30 |
| 100 | $1.42 | $142.00 |
| 500 | $1.18 | $590.00 |
| 1,000 | $0.99 | $990.00 |
| 5,000 | $0.83 | $4,150.00 |
IAUCN04S7L050HATMA1 概要
An OptiMOS™ 7 power transistor is Infineon's seventh-generation 40V trench MOSFET family, optimized for low RDS(on) × Qg figure-of-merit and best-in-class switching performance. Within the broader semiconductor taxonomy, OptiMOS 7 devices sit under the category of N-channel power MOSFETs, which in turn fall under discrete semiconductors and ultimately active electronic components. The OptiMOS 7 generation reduces gate charge by typically 30% versus the prior OptiMOS 5 generation while tightening threshold-voltage tolerance for safer parallel operation in high-current rails.
Key features include 40 V drain-source breakdown (VDS), ±20 V VGS rating, integrated ESD protection on the gate, 100% Rg-tested gates for avalanche ruggedness, and a logic-level compatible threshold voltage that supports 3.3 V and 5 V microcontroller GPIO drive. The 5.04 mΩ max RDS(on) is specified at VGS = 10 V, ID = 33 A, TJ = 25 °C, making the device well suited for 12 V automotive battery rails, 24 V mild-hybrid bus systems, and high-current synchronous buck converters. The dual-source / dual-drain pinout is configured for low-side + low-side or half-bridge MOSFET layouts with minimal parasitic source inductance.
Typical applications include automotive 12 V/48 V DC-DC converters, electric power steering (EPS) motor drives, brake-by-wire and electronic stability control (ESC) actuator bridges, battery management system (BMS) protection circuits, and synchronous rectification in telecom 48 V point-of-load converters. The automotive-grade qualification (per Infineon product page, family-level AEC-Q101) makes it suitable for safety-critical subsystems that demand high reliability across -55 °C to +175 °C junction temperatures.
When designing with this device, pay attention to gate-drive voltage headroom and ensure the VGS plateau voltage stays below 10 V under worst-case high-side dv/dt conditions. The half-bridge pinout simplifies gate-driver layout when paired with Infineon EiceDRIVER™ gate drivers, minimizing source-inductance-induced gate-amplitude bounce.
ドロップイン代替品: IAUCN04S7L050HATMA1 — 同一パッケージでピン互換。PCBの作り直しが必要な異なるパッケージの部品は除外されています。
このシリーズのバリエーション
同一シリーズでドロップイン互換のモデル: IAUCN04S7L050HATMA1 （同一形状・フットプリント） — 相違点: Package, Technology, Operating Temperature Range, Series, Automotive Qualification.
クイック比較ツール — 並列比較する代替部品を選択:
IAUCN10S5L110ATMA1
✅ ドロップイン ⚠️ 仕様未検証📋 参考代替品（カタログ未掲載）
IAUC100N04S6N028ATMA1
✅ ドロップイン ⚠️ 仕様未検証✓ 在庫あり
$0.42 / 個
データシートを見る →IAUC60N10S5L110ATMA1
✅ ドロップイン ⚠️ 仕様未検証✓ 在庫あり
$0.66 / 個
データシートを見る →IAUCN10S7L290TATMA1
✅ ドロップイン ⚠️ 仕様未検証✓ 在庫あり
$0.36 / 個
データシートを見る →IAUCN08S7N024ATMA1
✅ ドロップイン ⚠️ 仕様未検証✓ 在庫あり
$0.89 / 個
データシートを見る →IAUCN04S7L050HATMA1 最大定格＆電気的特性
| Manufacturer | Infineon Technologies |
| Series | OptiMOS™ 7 |
| Configuration | Dual N-Channel (Dual Drain, Half-Bridge) |
| Drain-Source Voltage (VDS) | 40 V |
| Continuous Drain Current (ID), Tc=25°C | 65 A |
| On-Resistance RDS(on) max @ VGS=10V | 5.04 mΩ |
| Gate-Source Voltage (VGS) max | ±20 V |
| Power Dissipation (PD) @ Tc=25°C | 40 W |
| 動作接合温度 | -55 °C to +175 °C |
| パッケージ | PG-TDSON-8-57 (SuperSO8 half-bridge) |
| 実装タイプ | Surface Mount |
| MSLレベル | 1 (per JEDEC J-STD-020) |
| RoHS ステータス | Compliant |
| Automotive Qualification | AEC-Q101 (family-level, automotive grade) |
| Technology | Trench MOSFET, OptiMOS™ 7 40V |
IAUCN04S7L050HATMA1 ピン構成
| ピン 1 | S1 / G1 — Source 1 / Gate 1 (per datasheet half-bridge configuration) |
| ピン 2 | G1 — Gate 1 - low-side MOSFET gate |
| ピン 3 | S2 — Source 2 - low-side MOSFET source |
| ピン 4 | G2 — Gate 2 - high-side MOSFET gate (in half-bridge config) |
| ピン 5 | D1 — Drain 1 tab / thermal pad connection |
| ピン 6 | D1 — Drain 1 tab (continued) / thermal pad |
| ピン 7 | D2 — Drain 2 tab / thermal pad connection |
| ピン 8 | D2 — Drain 2 tab (continued) / thermal pad |
安全動作領域 (estimated per datasheet envelope)
主な用途
IAUCN04S7L050HATMA1 の用途: 6 件s: Automotive 12V Synchronous Buck Converter, Electric Power Steering (EPS) Motor Drive, Battery Management System (BMS) Protection, Telecom 48V Point-of-Load (PoL) Buck Stage, Brake-by-Wire / ESC Actuator Drive, Industrial 24V Brushless DC Motor Drive.
Automotive 12V Synchronous Buck Converter
The IAUCN04S7L050HATMA1 fits 12V-to-low-voltage synchronous buck converter stages where its 5.04 mΩ max RDS(on) per channel at VGS = 10 V minimises conduction loss and the dual half-bridge pinout simplifies layout. At 30 A continuous per phase, each integrated MOSFET dissipates roughly 4.5 W at full load, comfortably handled by the PG-TDSON-8-57 thermal pad on a 2 oz copper 1 sq-inch PCB pour. The OptiMOS 7 generation's reduced gate charge (typically 30% lower than OptiMOS 5) translates directly into lower switching loss at 400 kHz - 1 MHz switching frequencies, improving efficiency by 1-2 percentage points versus the prior generation. AEC-Q101 family-level qualification supports deployment in body-electronics modules such as infotainment power and ADAS sensor rails where reliability is mandatory.
おすすめ
Electric Power Steering (EPS) Motor Drive
Electric power steering systems use three-phase BLDC motor inverters that demand rugged N-channel MOSFETs with low RDS(on) and high peak current capability. The IAUCN04S7L050HATMA1 delivers 65 A continuous drain current per channel and 5.04 mΩ RDS(on) at 10 V VGS, making it suitable for EPS inverter half-bridge stages operating from a 12V battery rail. The PG-TDSON-8-57 package's low package inductance minimises voltage overshoot during the 20 kHz PWM commutation typical of EPS drives, while AEC-Q101 qualification satisfies the automotive safety integrity requirements. In a 3-phase inverter, six IAUCN04S7L050HATMA1 channels handle 80 A peak assist currents during parking manoeuvres. The dual MOSFET configuration reduces part count by 50% versus single-channel discrete solutions.
おすすめ
Battery Management System (BMS) Protection
In BMS protection circuits, the IAUCN04S7L050HATMA1 serves as a low-side disconnect switch or as part of a solid-state relay that isolates the battery pack during fault conditions. Its 40 V VDS comfortably covers 16-cell Li-ion stacks at full charge (4.2 V × 16 = 67.2 V if used in higher-voltage variants - for 12V lead-acid this part is ideal). The 5.04 mΩ RDS(on) limits continuous conduction loss during normal operation, and the dual-channel configuration allows two parallel paths to share current, halving effective RDS(on) to ~2.5 mΩ. AEC-Q101 automotive qualification is mandatory for OEM battery packs. The PG-TDSON-8-57 package supports surface-mount automated assembly on the BMS PCB, and the ±20 V VGS rating protects against transient spikes during load disconnection.
おすすめ
Telecom 48V Point-of-Load (PoL) Buck Stage
For 48V telecom input rails stepping down to 12V or 5V intermediate buses in ORing and hot-swap applications, the IAUCN04S7L050HATMA1's dual N-channel configuration forms a compact half-bridge synchronous rectifier. While its 40 V VDS limits direct use at 48 V (clamping to 36 V maximum via transient-voltage-suppression diodes), the part excels at the secondary-side 12V-5V synchronous buck stage where efficiency above 96% is required at 20-30 A loads. The 5.04 mΩ RDS(on) keeps full-load conduction loss under 5 W per channel at typical PoL currents. OptiMOS 7's low Qgd reduces dead-time loss during the 200-500 kHz switching transition, while the SuperSO8 footprint is compatible with industry-standard 48V PoL module designs.
おすすめ
Brake-by-Wire / ESC Actuator Drive
Electronic Stability Control (ESC) and brake-by-wire systems use MOSFET half-bridges to drive hydraulic modulator solenoids at high PWM frequencies. The IAUCN04S7L050HATMA1's 65 A continuous drain current and 5.04 mΩ RDS(on) at 10 V VGS handle the peak solenoid currents that occur during ABS intervention events. The AEC-Q101 qualification combined with the -55 °C to +175 °C junction temperature range ensures reliable operation across underhood automotive thermal extremes. The dual half-bridge configuration in the SuperSO8 footprint allows one device per H-bridge solenoid driver, halving PCB area versus discrete solutions. The gate driver's ±20 V VGS tolerance accommodates the bootstrap-voltage transient spikes generated during high-side turn-off.
おすすめ
Industrial 24V Brushless DC Motor Drive
In industrial 24V BLDC motor drives powering small fans, pumps, and conveyor rollers, the IAUCN04S7L050HATMA1's 40 V VDS gives adequate margin above 24 V nominal bus voltage including back-EMF transients up to 32 V. The 5.04 mΩ RDS(on) at 10 V VGS keeps conduction loss manageable at the 10-20 A continuous currents typical of industrial motion control. Three devices (one per phase) form a complete 3-phase inverter in a tiny PCB footprint of just 5 × 6 mm per phase. The dual-drain pinout simplifies heatsinking since both channels share the thermal pad, allowing direct soldering to a copper pour for natural convection cooling. Industrial-grade reliability is supported by the -55 °C to +175 °C junction operating range.
おすすめ
おすすめ製品の概要
エンジニアリング参考データ: IAUCN04S7L050HATMA1 — 比較、設計ガイダンス、コンプライアンス情報。
選定ガイド
代替品との比較
| パラメータ | この製品 | IAUCN10S5L110ATMA1 | IAUC100N04S6N028ATMA1 | IAUC60N10S5L110ATMA1 | IAUCN10S7L290TATMA1 | IAUCN08S7N024ATMA1 |
|---|---|---|---|---|---|---|
| Brand | Infineon Technologies | Infineon Technologies | Infineon Technologies | Infineon Technologies | Infineon Technologies | Infineon Technologies |
| Package | PG-TDSON-8-57 (SuperSO8 half-bridge) | PG-TDSON-8-57 - same | PG-TDSON-8-57 - same | PG-TDSON-8-57 - same | PG-TDSON-8-57 - same | PG-TDSON-8-57 - same |
| Drain-Source Voltage (VDS) | 40 V | 40 V | 40 V | 60 V | 40 V | 80 V |
| RDS(on) max @ VGS=10V | 5.04 mΩ | 11 mΩ | 2.8 mΩ | 11 mΩ | 29 mΩ | 2.4 mΩ |
| Technology | OptiMOS 7 40V Trench | OptiMOS 7 40V Trench | OptiMOS 7 40V Trench | OptiMOS 7 60V Trench | OptiMOS 7 40V Trench | OptiMOS 7 80V Trench |
| Automotive Grade | AEC-Q101 (family) | AEC-Q101 | AEC-Q101 | AEC-Q101 | AEC-Q101 | AEC-Q101 |
| Configuration | Dual N-Channel (Half-Bridge) | Dual N-Channel (Half-Bridge) | Dual N-Channel (Half-Bridge) | Dual N-Channel (Half-Bridge) | Dual N-Channel (Half-Bridge) | Dual N-Channel |
主な差別化要因
- Lowest RDS(on) in the 40V OptiMOS 7 PG-TDSON-8 family （vs IAUCN10S5L110ATMA1)
- 40V rating optimised for 12V automotive rails （vs IAUC60N10S5L110ATMA1)
- Dual half-bridge configuration in single package （vs IAUC100N04S6N028ATMA1)
設計ノート
Estimated: with Tc held at 25 °C and 65 A continuous drain current, total package dissipation reaches 40 W before thermal shutdown. On a standard 2-layer FR4 PCB with 1 sq-inch copper pour, junction-to-ambient thermal resistance θJA is approximately 50 °C/W, allowing ~2.5 W of steady-state dissipation without exceeding the 150 °C junction limit. For continuous operation above 15 A per channel, attach the exposed thermal pad to a copper area of at least 1 sq inch with 9 thermal vias (0.3 mm drill) to an inner copper plane. Forced-air cooling (200 LFM) reduces θJA to ~30 °C/W, doubling the safe dissipation envelope.
The PG-TDSON-8-57 (SuperSO8 half-bridge) footprint requires careful attention to source-inductance minimisation. Keep the gate-drive return path directly over the source tab (pin 1 for low-side, pin 3 for high-side) using a 4-layer stackup with the second layer as a continuous ground plane. Place the gate-driver IC within 5 mm of the gate pins to limit gate-loop inductance below 1 nH. Add a 10 Ω gate-source resistor on each gate to suppress Vgs bounce during high dv/dt switching transitions above 5 V/ns.
Do not exceed the absolute maximum VGS rating of ±20 V - many gate drivers can output transient overshoot above this limit during high-side turn-off due to parasitic inductance. Add a 10 V Zener (e.g., BZX84C10) between gate and source of each MOSFET if the gate driver lacks internal clamping. Also verify the bootstrap capacitor for the high-side gate drive is sized to deliver at least 10× the total gate charge (Qg) over each PWM cycle - undersized bootstrap capacitance causes the high-side Vgs to droop below 8 V under load, increasing RDS(on) and risking thermal runaway.
コンプライアンス情報
AEC-Q101 qualified per Infineon OptiMOS 7 family datasheet. RoHS and REACH compliant per Infineon product page. Halogen-free per JEDEC JS709B. MSL Level 1 per JEDEC J-STD-020.
