IAUC100N10S5N040ATMA1 vs IAUC120N06S5L011ATMA1 比較
詳細な並列比較: IAUC100N10S5N040ATMA1 メーカー: Infineon および IAUC120N06S5L011ATMA1 メーカー: Infineon。主要仕様、電気的特性、パッケージ、ライフサイクルステータス、価格、在庫状況を比較して、設計要件に最適な部品を判断してください。
Infineon
IAUC100N10S5N040ATMA1 - 100V 4mΩ 100A OptiMOS-5 N-MOSFET | Infineon
IAUC100N10S5N040ATMA1 ✓ 生産中Infineon
IAUC120N06S5L011ATMA1 - 60V 1.1mOhm 310A OptiMOS 5 MOSFET | Infineon
IAUC120N06S5L011ATMA1 ✓ 生産中仕様比較
| パラメータ | IAUC100N10S5N040ATMA1 | IAUC120N06S5L011ATMA1 |
|---|---|---|
| ブランド | Infineon | Infineon |
| カテゴリ | MOSFETs | MOSFETs |
| ライフサイクル状態 | 有効 | 有効 |
| 在庫状況 | In Stock | In Stock |
| 単価（USD） | $1.62 | $2.10 |
| FET Type | N-Channel, Enhancement Mode | — |
| Technology | OptiMOS-5 | — |
| Drain-Source Voltage (VDS) | 100 V | — |
| Continuous Drain Current (ID) @ TC=25C | 100 A (package-limited) | — |
| Pulsed Drain Current (IDM) | 400 A | — |
| RDS(on) max @ VGS=10V | 4 mΩ | — |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: VGS(th) typical value] | — |
| Total Gate Charge (Qg) | [DATA_NEEDED: Qg value] | — |
| Maximum Power Dissipation (PD) | 167 W @ TC=25C | — |
| Thermal Resistance, Junction-to-Case (RthJC) | 0.9 K/W | — |
| 動作温度範囲 | -55C to +175C (junction) | — |
| パッケージ | PG-TDSON-8-34 (TDSON-8, 5x6 mm) Surface Mount | PG-TDSON-8-53 (TDSON-8 FL, 5 mm × 6 mm) |
| 実装タイプ | Surface Mount | Surface Mount |
| MSLレベル | MSL1 (up to 260C peak reflow) | 1 (per JEDEC J-STD-020) |
| Automotive Qualification | AEC-Q100 qualified | AEC-Q101 qualified |
| Avalanche Rating | 100% Avalanche tested | — |
| AOI Compatibility | Feasible for Automatic Optical Inspection | — |
| RoHS ステータス | Compliant | Compliant |
| Manufacturer | — | Infineon Technologies |
| Product Family | — | OptiMOS 5 60 V (S5 generation) |
| Polarity / Channel Type | — | N-Channel |
| Drain-Source Voltage (V_DS) | — | 60 V |
| Gate-Source Voltage (V_GS) | — | [DATA_NEEDED: max V_GS rating] |
| Continuous Drain Current (I_D) | — | 310 A (Tj), 120 A marketing |
| R_DS(on) max | — | [DATA_NEEDED: R_DS(on) at V_GS = 4.5 V] |
| Power Dissipation (P_D) | — | 188 W at T_C = 25 °C |
| 動作接合温度 | — | -55 °C to +175 °C |
| Avalanche Energy Rated | — | Yes (EAS) |