IAUC100N10S5N040ATMA1 vs IAUC120N06S5L011ATMA1 对比

详细并排对比 IAUC100N10S5N040ATMA1 出自 Infineon 和 IAUC120N06S5L011ATMA1 出自 Infineon。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况,以确定最适合您设计需求的元器件。

Infineon
IAUC100N10S5N040ATMA1 IAUC100N10S5N040ATMA1 - 100V 4mΩ 100A OptiMOS-5 N-MOSFET | Infineon

IAUC100N10S5N040ATMA1 - 100V 4mΩ 100A OptiMOS-5 N-MOSFET | Infineon

IAUC100N10S5N040ATMA1 ✓ 量产中
Infineon
IAUC120N06S5L011ATMA1 IAUC120N06S5L011ATMA1 - 60V 1.1mOhm 310A OptiMOS 5 MOSFET | Infineon

IAUC120N06S5L011ATMA1 - 60V 1.1mOhm 310A OptiMOS 5 MOSFET | Infineon

IAUC120N06S5L011ATMA1 ✓ 量产中

规格对比

参数 IAUC100N10S5N040ATMA1 IAUC120N06S5L011ATMA1
品牌 Infineon Infineon
分类 MOSFETs MOSFETs
生命周期状态 有效 有效
库存状态 有库存 有库存
单价(USD) $1.62 $2.10
FET Type N-Channel, Enhancement Mode —
Technology OptiMOS-5 —
Drain-Source Voltage (VDS) 100 V —
Continuous Drain Current (ID) @ TC=25C 100 A (package-limited) —
Pulsed Drain Current (IDM) 400 A —
RDS(on) max @ VGS=10V 4 mΩ —
Gate Threshold Voltage (VGS(th)) [DATA_NEEDED: VGS(th) typical value] —
Total Gate Charge (Qg) [DATA_NEEDED: Qg value] —
Maximum Power Dissipation (PD) 167 W @ TC=25C —
Thermal Resistance, Junction-to-Case (RthJC) 0.9 K/W —
工作温度范围 -55C to +175C (junction) —
封装 PG-TDSON-8-34 (TDSON-8, 5x6 mm) Surface Mount PG-TDSON-8-53 (TDSON-8 FL, 5 mm × 6 mm)
安装类型 Surface Mount Surface Mount
MSL 等级 MSL1 (up to 260C peak reflow) 1 (per JEDEC J-STD-020)
Automotive Qualification AEC-Q100 qualified AEC-Q101 qualified
Avalanche Rating 100% Avalanche tested —
AOI Compatibility Feasible for Automatic Optical Inspection —
RoHS 状态 Compliant Compliant
Manufacturer — Infineon Technologies
Product Family — OptiMOS 5 60 V (S5 generation)
Polarity / Channel Type — N-Channel
Drain-Source Voltage (V_DS) — 60 V
Gate-Source Voltage (V_GS) — [DATA_NEEDED: max V_GS rating]
Continuous Drain Current (I_D) — 310 A (Tj), 120 A marketing
R_DS(on) max — [DATA_NEEDED: R_DS(on) at V_GS = 4.5 V]
Power Dissipation (P_D) — 188 W at T_C = 25 °C
工作结温 — -55 °C to +175 °C
Avalanche Energy Rated — Yes (EAS)

数据手册与资源

浏览全部产品 创建 BOM 获取报价