IAUCN04S7L009ATMA1 vs IAUCN04S7L042GATMA1 比較
詳細な並列比較: IAUCN04S7L009ATMA1 メーカー: Infineon および IAUCN04S7L042GATMA1 メーカー: Infineon。主要仕様、電気的特性、パッケージ、ライフサイクルステータス、価格、在庫状況を比較して、設計要件に最適な部品を判断してください。
Infineon
IAUCN04S7L009ATMA1 - 40V 275A 0.91mΩ OptiMOS 7 N-MOSFET | Infineon
IAUCN04S7L009ATMA1 ✓ 生産中Infineon
IAUCN04S7L042GATMA1 - 40V 77A OptiMOS 7 N-MOSFET, PG-THSOG-4 | Infineon
IAUCN04S7L042GATMA1 ✓ 生産中仕様比較
| パラメータ | IAUCN04S7L009ATMA1 | IAUCN04S7L042GATMA1 |
|---|---|---|
| ブランド | Infineon | Infineon |
| カテゴリ | MOSFETs | MOSFETs |
| ライフサイクル状態 | 有効 | 有効 |
| 在庫状況 | In Stock | In Stock |
| 単価（USD） | $0.96 | $0.86 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Part Number | IAUCN04S7L009ATMA1 | — |
| トランジスタタイプ | N-Channel MOSFET | — |
| Technology | OptiMOS™ 7 (trench-gate) | Trench N-Channel MOSFET |
| Drain-Source Voltage (Vdss) | 40 V | — |
| Continuous Drain Current (Id, Tc=25°C) | 275 A (Tj) | — |
| Continuous Drain Current (Id, Tc=100°C) | 175 A | — |
| Power Dissipation (Pd, Tc=25°C) | 129 W | — |
| Rds(on) Max @ Vgs=10V | 0.91 mΩ | — |
| Gate Threshold Voltage (Vgs(th)) | [DATA_NEEDED: Vgs(th) typical value] | — |
| Gate Charge (Qg) | [DATA_NEEDED: total gate charge] | — |
| パッケージ | PG-TDSON-8-34 (TDSON EP) | PG-THSOG-4 (SSO4G 5x6) leaded surface mount |
| 実装タイプ | Surface Mount | Surface Mount (IMS substrate / FR4 with thermal vias) |
| 動作温度範囲 | -55 °C to +175 °C (Tj) | -55C to +175C (Tj) |
| Automotive Qualification | AEC-Q101 qualified | — |
| MSLレベル | 1 | 1 |
| RoHS ステータス | Compliant | Compliant |
| Product Family | — | OptiMOS 7 40V |
| Drain-Source Voltage (VDS) | — | 40 V |
| Continuous Drain Current (ID, Tj) | — | 77 A |
| Maximum Power Dissipation (PD, Tc) | — | 50 W |
| Polarity / Channel Type | — | N-Channel enhancement mode |
| Automotive Qualified | — | Yes (Automotive grade, AEC-Q101 expected for Infineon OptiMOS 7 automotive parts) |
| Packing | — | Tape & Reel (per -ATMA1 suffix) |
| Target Substrate | — | IMS substrate and legacy FR4 designs |
| On-State Resistance RDS(on) | — | [DATA_NEEDED: RDS(on) max @ VGS=10V] |
| Gate Threshold Voltage VGS(th) | — | [DATA_NEEDED: VGS(th) typical/min/max] |
| Total Gate Charge Qg | — | [DATA_NEEDED: Qg @ VGS=10V] |