IAUCN04S7L009ATMA1 vs IAUCN04S7L042GATMA1 Comparison

Detailed side-by-side comparison of IAUCN04S7L009ATMA1 by Infineon and IAUCN04S7L042GATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Specification Comparison

Parameter IAUCN04S7L009ATMA1 IAUCN04S7L042GATMA1
Brand Infineon Infineon
Category MOSFETs MOSFETs
Lifecycle Status Active Active
Manufacturer Infineon Technologies Infineon Technologies
Part Number IAUCN04S7L009ATMA1 —
Transistor Type N-Channel MOSFET —
Technology OptiMOS™ 7 (trench-gate) Trench N-Channel MOSFET
Drain-Source Voltage (Vdss) 40 V —
Continuous Drain Current (Id, Tc=25°C) 275 A (Tj) —
Continuous Drain Current (Id, Tc=100°C) 175 A —
Power Dissipation (Pd, Tc=25°C) 129 W —
Rds(on) Max @ Vgs=10V 0.91 mΩ —
Gate Threshold Voltage (Vgs(th)) [DATA_NEEDED: Vgs(th) typical value] —
Gate Charge (Qg) [DATA_NEEDED: total gate charge] —
Package PG-TDSON-8-34 (TDSON EP) PG-THSOG-4 (SSO4G 5x6) leaded surface mount
Mounting Type Surface Mount Surface Mount (IMS substrate / FR4 with thermal vias)
Operating Temperature Range -55 °C to +175 °C (Tj) -55C to +175C (Tj)
Automotive Qualification AEC-Q101 qualified —
MSL Level 1 1
RoHS Status Compliant Compliant
Product Family — OptiMOS 7 40V
Drain-Source Voltage (VDS) — 40 V
Continuous Drain Current (ID, Tj) — 77 A
Maximum Power Dissipation (PD, Tc) — 50 W
Polarity / Channel Type — N-Channel enhancement mode
Automotive Qualified — Yes (Automotive grade, AEC-Q101 expected for Infineon OptiMOS 7 automotive parts)
Packing — Tape & Reel (per -ATMA1 suffix)
Target Substrate — IMS substrate and legacy FR4 designs
On-State Resistance RDS(on) — [DATA_NEEDED: RDS(on) max @ VGS=10V]
Gate Threshold Voltage VGS(th) — [DATA_NEEDED: VGS(th) typical/min/max]
Total Gate Charge Qg — [DATA_NEEDED: Qg @ VGS=10V]

Datasheets & Resources

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