IAUCN04S7N006ATMA1 vs IAUCN04S6N009TATMA1 比較
詳細な並列比較: IAUCN04S7N006ATMA1 メーカー: Infineon および IAUCN04S6N009TATMA1 メーカー: Infineon。主要仕様、電気的特性、パッケージ、ライフサイクルステータス、価格、在庫状況を比較して、設計要件に最適な部品を判断してください。
仕様比較
| パラメータ | IAUCN04S7N006ATMA1 | IAUCN04S6N009TATMA1 |
|---|---|---|
| ブランド | Infineon | Infineon |
| カテゴリ | MOSFETs | MOSFETs |
| ライフサイクル状態 | 有効 | 有効 |
| 在庫状況 | In Stock | In Stock |
| 単価（USD） | $0.95 | $1.71 |
| FET Type | N-Channel | — |
| Drain-Source Voltage (VDS) | 40 V | 40 V |
| Continuous Drain Current (ID) | 175 A | — |
| On-State Resistance (RDS(on)) | 0.63 mOhm (typ at VGS = 10 V) | — |
| Gate-Source Voltage (VGS) Max | [DATA_NEEDED: VGS max rating] | — |
| Threshold Voltage (VGS(th)) | [DATA_NEEDED: VGS(th) typical] | — |
| Technology | OptiMOS 5 (trench) | OptiMOS 6 trench MOSFET |
| パッケージ | PG-TDSON-8-43 | PG-LHDSO-10-2 (SSO10T) |
| 実装タイプ | Surface Mount | Surface Mount |
| 動作温度範囲 | -55 C to +175 C | — |
| Junction Temperature Max | 175 C | — |
| Power Dissipation Max (Pd) | [DATA_NEEDED: Pd max] | — |
| Gate Charge Total (Qg) | [DATA_NEEDED: Qg total] | — |
| Automotive Qualification | AEC-Q101 | AEC-Q101 |
| Lead-Free / RoHS | Yes (compliant) | Yes / Compliant |
| MSLレベル | [DATA_NEEDED: MSL rating] | — |
| Manufacturer | — | Infineon Technologies |
| Part Family | — | OptiMOS 6 40 V |
| Part Number | — | IAUCN04S6N009T |
| Ordering Code (MPN) | — | IAUCN04S6N009TATMA1 |
| Channel Type | — | N-Channel |
| Continuous Drain Current (ID, at Tj) | — | 330 A |
| Power Dissipation (PD, at Tc) | — | 178 W |
| On-Resistance RDS(on) max | — | 0.9 mΩ |
| Gate Threshold VGS(th) typ | — | [DATA_NEEDED: gate threshold voltage] |
| Total Gate Charge Qg typ | — | [DATA_NEEDED: total gate charge] |