IAUCN04S7N006ATMA1 vs IAUCN04S6N009TATMA1 Comparison

Detailed side-by-side comparison of IAUCN04S7N006ATMA1 by Infineon and IAUCN04S6N009TATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Specification Comparison

Parameter IAUCN04S7N006ATMA1 IAUCN04S6N009TATMA1
Brand Infineon Infineon
Category MOSFETs MOSFETs
Lifecycle Status Active Active
FET Type N-Channel —
Drain-Source Voltage (VDS) 40 V 40 V
Continuous Drain Current (ID) 175 A —
On-State Resistance (RDS(on)) 0.63 mOhm (typ at VGS = 10 V) —
Gate-Source Voltage (VGS) Max [DATA_NEEDED: VGS max rating] —
Threshold Voltage (VGS(th)) [DATA_NEEDED: VGS(th) typical] —
Technology OptiMOS 5 (trench) OptiMOS 6 trench MOSFET
Package PG-TDSON-8-43 PG-LHDSO-10-2 (SSO10T)
Mounting Type Surface Mount Surface Mount
Operating Temperature Range -55 C to +175 C —
Junction Temperature Max 175 C —
Power Dissipation Max (Pd) [DATA_NEEDED: Pd max] —
Gate Charge Total (Qg) [DATA_NEEDED: Qg total] —
Automotive Qualification AEC-Q101 AEC-Q101
Lead-Free / RoHS Yes (compliant) Yes / Compliant
MSL Level [DATA_NEEDED: MSL rating] —
Manufacturer — Infineon Technologies
Part Family — OptiMOS 6 40 V
Part Number — IAUCN04S6N009T
Ordering Code (MPN) — IAUCN04S6N009TATMA1
Channel Type — N-Channel
Continuous Drain Current (ID, at Tj) — 330 A
Power Dissipation (PD, at Tc) — 178 W
On-Resistance RDS(on) max — 0.9 mΩ
Gate Threshold VGS(th) typ — [DATA_NEEDED: gate threshold voltage]
Total Gate Charge Qg typ — [DATA_NEEDED: total gate charge]

Datasheets & Resources

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