IAUCN08S7L024ATMA1 vs IAUCN04S7L050HATMA1 比較
詳細な並列比較: IAUCN08S7L024ATMA1 メーカー: Infineon および IAUCN04S7L050HATMA1 メーカー: Infineon。主要仕様、電気的特性、パッケージ、ライフサイクルステータス、価格、在庫状況を比較して、設計要件に最適な部品を判断してください。
仕様比較
| パラメータ | IAUCN08S7L024ATMA1 | IAUCN04S7L050HATMA1 |
|---|---|---|
| ブランド | Infineon | Infineon |
| カテゴリ | MOSFETs | MOSFETs |
| ライフサイクル状態 | 有効 | 有効 |
| 在庫状況 | In Stock | In Stock |
| 単価（USD） | $1.68 | $0.83 |
| Technology | OptiMOS™ 7 N-channel trench MOSFET | Trench MOSFET, OptiMOS™ 7 40V |
| Drain-Source Voltage (VDS) | 80 V | 40 V |
| Continuous Drain Current (ID) | 177 A (Tj) | — |
| Continuous Drain Current (Silicon-limited) | 150 A | — |
| On-Resistance RDS(on) max | 2.4 mΩ at VGS=10 V | — |
| Power Dissipation (PD) | 148 W (Tc) | — |
| パッケージ | PG-TDSON-8-34 (SSO8 5x6 mm²) | PG-TDSON-8-57 (SuperSO8 half-bridge) |
| 実装タイプ | Surface Mount | Surface Mount |
| 動作温度範囲 | -55C to +175C (Tj) | — |
| Gate Threshold Voltage VGS(th) | [DATA_NEEDED: VGS(th) typical/min/max] | — |
| Total Gate Charge Qg | [DATA_NEEDED: Qg typ] | — |
| Avalanche Energy Rated | Yes (single-pulse) | — |
| Automotive Qualification | AEC-Q101 qualified | AEC-Q101 (family-level, automotive grade) |
| RoHS ステータス | Compliant | Compliant |
| MSLレベル | MSL1 (per JEDEC J-STD-020) | 1 (per JEDEC J-STD-020) |
| Manufacturer | — | Infineon Technologies |
| Series | — | OptiMOS™ 7 |
| Configuration | — | Dual N-Channel (Dual Drain, Half-Bridge) |
| Continuous Drain Current (ID), Tc=25°C | — | 65 A |
| Pulsed Drain Current (IDM) | — | [DATA_NEEDED: pulsed drain current] |
| On-Resistance RDS(on) max @ VGS=10V | — | 5.04 mΩ |
| Gate-Source Voltage (VGS) max | — | ±20 V |
| Gate Threshold Voltage (VGS(th)) | — | [DATA_NEEDED: gate threshold voltage] |
| Total Gate Charge (Qg) | — | [DATA_NEEDED: total gate charge] |
| Power Dissipation (PD) @ Tc=25°C | — | 40 W |
| 動作接合温度 | — | -55 °C to +175 °C |