IMW120R045M1H vs SCT4062KRC15 比較
詳細な並列比較: IMW120R045M1H メーカー: Infineon および SCT4062KRC15 メーカー: ROHM Semiconductor。主要仕様、電気的特性、パッケージ、ライフサイクルステータス、価格、在庫状況を比較して、設計要件に最適な部品を判断してください。
仕様比較
| パラメータ | IMW120R045M1H | SCT4062KRC15 |
|---|---|---|
| ブランド | Infineon | ROHM Semiconductor |
| カテゴリ | MOSFETs | MOSFETs |
| ライフサイクル状態 | 有効 | 有効 |
| 在庫状況 | In Stock | In Stock |
| 単価（USD） | $0.00 | $7.65 |
| Technology | CoolSiC SiC Trench MOSFET | Silicon Carbide (SiC), trench-gate |
| Drain-Source Voltage (VDS) | 1200 V | — |
| On-Resistance (RDS(on)) | 45 mOhm at Tj = 25C | — |
| Continuous Drain Current (ID) | 52 A at Tc = 25C | — |
| 消費電力（Ptot） | 228 W at Tc = 25C | — |
| Gate Threshold Voltage (VGS(th)) | 4.5 V | — |
| Recommended Turn-On Gate Voltage | 15 V | — |
| Turn-Off Gate Voltage | 0 V | — |
| Configuration | Single N-channel with built-in body diode | Single N-Channel |
| 実装タイプ | Through Hole | Through-Hole (THD) |
| パッケージ | PG-TO247-3-41 (TO-247-3) | TO-247-4L (4-pin through-hole, Kelvin source) |
| Qualification | Industrial grade | — |
| Gate Drive Compatibility | IGBT-compatible gate drive | — |
| dv/dt Control | Fully controllable via gate resistor | — |
| Body Diode | Robust, suitable for synchronous rectification | — |
| Turn-Off Switching Losses | Temperature independent | — |
| Manufacturer Recommended Operating Margin | Do not exceed 80% of maximum ratings for optimum lifetime | — |
| Manufacturer | — | ROHM Semiconductor |
| Product Family | — | 4th-Gen SiC Trench MOSFET |
| トランジスタタイプ | — | N-Channel SiC MOSFET |
| Drain-Source Voltage (V_DSS) | — | 1200 V |
| Continuous Drain Current (I_D, Tc) | — | 26 A |
| R_DS(on) (typ) | — | 62 mΩ @ V_GS = 18 V |
| Gate-Source Voltage (V_GS) Drive | — | 15 V nominal, ±18 V max |
| Power Dissipation (P_D, Tc=25°C) | — | 115 W |
| 動作接合温度 | — | -55 °C to +175 °C |
| Gate-Drive Logic | — | Standard SiC drive (15 V V_GS) |
| Short-Circuit Withstand | — | Yes (per datasheet) |
| RoHS ステータス | — | Compliant |