IMW120R045M1H vs SCT4062KRC15 对比
详细并排对比 IMW120R045M1H 出自 Infineon 和 SCT4062KRC15 出自 ROHM Semiconductor。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况，以确定最适合您设计需求的元器件。
规格对比
| 参数 | IMW120R045M1H | SCT4062KRC15 |
|---|---|---|
| 品牌 | Infineon | ROHM Semiconductor |
| 分类 | MOSFETs | MOSFETs |
| 生命周期状态 | 有效 | 有效 |
| 库存状态 | 有库存 | 有库存 |
| 单价（USD） | $0.00 | $7.65 |
| Technology | CoolSiC SiC Trench MOSFET | Silicon Carbide (SiC), trench-gate |
| Drain-Source Voltage (VDS) | 1200 V | — |
| On-Resistance (RDS(on)) | 45 mOhm at Tj = 25C | — |
| Continuous Drain Current (ID) | 52 A at Tc = 25C | — |
| 功耗（Ptot） | 228 W at Tc = 25C | — |
| Gate Threshold Voltage (VGS(th)) | 4.5 V | — |
| Recommended Turn-On Gate Voltage | 15 V | — |
| Turn-Off Gate Voltage | 0 V | — |
| Configuration | Single N-channel with built-in body diode | Single N-Channel |
| 安装类型 | Through Hole | Through-Hole (THD) |
| 封装 | PG-TO247-3-41 (TO-247-3) | TO-247-4L (4-pin through-hole, Kelvin source) |
| Qualification | Industrial grade | — |
| Gate Drive Compatibility | IGBT-compatible gate drive | — |
| dv/dt Control | Fully controllable via gate resistor | — |
| Body Diode | Robust, suitable for synchronous rectification | — |
| Turn-Off Switching Losses | Temperature independent | — |
| Manufacturer Recommended Operating Margin | Do not exceed 80% of maximum ratings for optimum lifetime | — |
| Manufacturer | — | ROHM Semiconductor |
| Product Family | — | 4th-Gen SiC Trench MOSFET |
| 晶体管类型 | — | N-Channel SiC MOSFET |
| Drain-Source Voltage (V_DSS) | — | 1200 V |
| Continuous Drain Current (I_D, Tc) | — | 26 A |
| R_DS(on) (typ) | — | 62 mΩ @ V_GS = 18 V |
| Gate-Source Voltage (V_GS) Drive | — | 15 V nominal, ±18 V max |
| Power Dissipation (P_D, Tc=25°C) | — | 115 W |
| 工作结温 | — | -55 °C to +175 °C |
| Gate-Drive Logic | — | Standard SiC drive (15 V V_GS) |
| Short-Circuit Withstand | — | Yes (per datasheet) |
| RoHS 状态 | — | Compliant |