IMZ120R080M1H vs C3M0080120D 比較
詳細な並列比較: IMZ120R080M1H メーカー: Infineon および C3M0080120D メーカー: Wolfspeed。主要仕様、電気的特性、パッケージ、ライフサイクルステータス、価格、在庫状況を比較して、設計要件に最適な部品を判断してください。
仕様比較
| パラメータ | IMZ120R080M1H | C3M0080120D |
|---|---|---|
| ブランド | Infineon | Wolfspeed |
| カテゴリ | MOSFETs | MOSFETs |
| ライフサイクル状態 | 有効 | 有効 |
| 在庫状況 | In Stock | In Stock |
| 単価（USD） | $10.95 | $17.95 |
| Manufacturer | Infineon Technologies | Wolfspeed |
| Product Family | CoolSiC 1200V SiC Trench MOSFET | — |
| Technology | Silicon Carbide (SiC) trench MOSFET | Silicon Carbide (SiC) Power MOSFET, 3rd generation (C3M) |
| Drain-to-Source Voltage (VDS) | 1200 V | — |
| On-State Resistance RDS(on) | 80 mOhm at Tj = 25 C | — |
| Gate Threshold Voltage VGS(th) | 4.5 V (benchmark) | — |
| Turn-Off Gate Voltage | 0 V | — |
| Transistor Polarity | N-Channel | — |
| 実装スタイル | Through Hole | — |
| パッケージ | PG-TO247-4 | TO-247-3 (through-hole, 3 leads + tab) |
| Robust Body Diode | Yes, supports hard commutation | — |
| Threshold-free On-state | Yes | — |
| Switching Losses | Very low (per datasheet) | — |
| Recommended Operating Margin | <= 80% of maximum ratings | — |
| RoHS | Compliant (per Mouser listing) | — |
| Part Number | — | C3M0080120D |
| Channel Type | — | N-Channel Enhancement Mode |
| Drain-Source Voltage (Vdss) | — | 1200 V |
| On-Resistance Rds(on) typ | — | 80 mOhm |
| Continuous Drain Current (Tc) | — | 36 A |
| Power Dissipation (Tc) | — | 192 W |
| Gate-Source Voltage (Vgs max) | — | -10 V to +25 V (recommended +15/-3 V) |
| 動作接合温度 | — | -55 C to +175 C |
| 実装タイプ | — | Through Hole |
| RoHS ステータス | — | Compliant |
| Lead-Free | — | Yes |
| Body Diode | — | Intrinsic, zero reverse recovery (Qrr) |