IPB60R165CPATMA1 vs IPD60R210PFD7SAUMA1 比較
詳細な並列比較: IPB60R165CPATMA1 メーカー: Infineon および IPD60R210PFD7SAUMA1 メーカー: Infineon。主要仕様、電気的特性、パッケージ、ライフサイクルステータス、価格、在庫状況を比較して、設計要件に最適な部品を判断してください。
Infineon
IPB60R165CPATMA1 - 600V 165mΩ CoolMOS CP N-Channel MOSFET | Infineon
IPB60R165CPATMA1 ✓ 生産中Infineon
IPD60R210PFD7SAUMA1 - 600V CoolMOS PFD7 210mOhm MOSFET | Infineon
IPD60R210PFD7SAUMA1 ✓ 生産中仕様比較
| パラメータ | IPB60R165CPATMA1 | IPD60R210PFD7SAUMA1 |
|---|---|---|
| ブランド | Infineon | Infineon |
| カテゴリ | MOSFETs | MOSFETs |
| ライフサイクル状態 | 有効 | 有効 |
| 在庫状況 | In Stock | In Stock |
| 単価（USD） | $1.78 | $0.54 |
| Technology | CoolMOS CP (superjunction, N-Channel) | Superjunction (CoolMOS) N-Channel Power MOSFET |
| Drain-Source Voltage (VDS) | 600 V | 600 V |
| Continuous Drain Current (ID, Tc=25°C) | 21 A | — |
| Power Dissipation (PD, Tc=25°C) | 192 W | — |
| On-Resistance RDS(on), max (VGS=10V) | 165 mΩ | — |
| Gate-Source Voltage (VGS) | ±20 V | — |
| Gate Threshold Voltage (VGS(th), typ) | 3.5 V | 3.5 V |
| Total Gate Charge (Qg, typ) | [DATA_NEEDED: Qg typical value] | — |
| Operating Temperature Range (TJ) | -55°C to +150°C | — |
| パッケージ | PG-TO263-3-2 (D2PAK-2) | — |
| 実装タイプ | Surface Mount | Surface Mount (SMT) |
| RoHS ステータス | Compliant (Pb-free lead plating) | — |
| JEDEC Qualification | Qualified per JEDEC for target applications | — |
| dv/dt Ruggedness | Extreme dv/dt rated | — |
| Polarity / Channel | N-Channel | — |
| Manufacturer | — | Infineon Technologies |
| Product Family | — | CoolMOS PFD7 |
| Continuous Drain Current (ID, Tc) | — | 16 A |
| On-Resistance (RDS(on), max) | — | 210 mOhm |
| Power Dissipation (Ptot, Tc=25C) | — | 64 W |
| Gate Charge (Qg, typ) | — | [DATA_NEEDED: Qg value] |
| Package Type | — | TO-252 (DPAK) |
| Manufacturer Package Designator | — | PG-TO252-3-344 |
| Pin Configuration | — | 3-Pin (2+Tab) - Gate, Drain (tab), Source |
| 動作温度範囲 | — | -55C to +150C (TJ) |
| Lead-Free / RoHS | — | Yes (compliant) |
| Application Segment | — | Consumer-grade SMPS |