IPD031N03LGATMA1 vs IPD50N03S4L06ATMA1 比較
詳細な並列比較: IPD031N03LGATMA1 メーカー: Infineon および IPD50N03S4L06ATMA1 メーカー: Infineon。主要仕様、電気的特性、パッケージ、ライフサイクルステータス、価格、在庫状況を比較して、設計要件に最適な部品を判断してください。
仕様比較
| パラメータ | IPD031N03LGATMA1 | IPD50N03S4L06ATMA1 |
|---|---|---|
| ブランド | Infineon | Infineon |
| カテゴリ | MOSFETs | MOSFETs |
| ライフサイクル状態 | 有効 | 有効 |
| 在庫状況 | In Stock | In Stock |
| 単価（USD） | $0.41 | $0.49 |
| FET Type | N-Channel | N-Channel, Enhancement Mode |
| Technology | MOSFET (Metal Oxide), OptiMOS 3 | — |
| Drain-to-Source Voltage (Vdss) | 30 V | — |
| Continuous Drain Current (Id) @ 25 °C | 90 A (Tc) | — |
| Power Dissipation (Pd) | 94 W (Tc) | — |
| RDS(on) Max @ VGS=10V | 3.1 mΩ | — |
| RDS(on) Max @ VGS=4.5V | [DATA_NEEDED: RDS(on) @ 4.5V] | — |
| Gate Threshold Voltage (Vgs(th)) | [DATA_NEEDED: Vgs(th) typical/max] | — |
| Drive Voltage (Max RDS(on), Min RDS(on)) | 4.5 V, 10 V | — |
| Gate Charge (Qg) | [DATA_NEEDED: Qg typical @ 10V Vgs] | — |
| Output Charge (Qoss) | Ultra low (per datasheet tagline) | — |
| 動作温度 | -55 °C to +175 °C (junction) | — |
| パッケージ | PG-TO252-3-11 (DPAK-2) | PG-TO252-3-11 (DPAK), 3-pin (2 + tab), surface mount |
| 実装タイプ | Surface Mount | Surface Mount |
| Mounting Tab | Drain (electrically connected) | — |
| Avalanche Energy Rated | Yes (per OptiMOS 3 datasheet family) | — |
| RoHS ステータス | Compliant | Compliant (Green Package) |
| MSLレベル | 1 | MSL1 (up to 260 C peak reflow) |
| Drain-Source Voltage (V_DS) | — | 30 V |
| Continuous Drain Current (I_D, Tc) | — | 50 A |
| On-State Resistance (R_DS(on) max) | — | 5.5 mOhm at V_GS = 10 V |
| Gate Threshold Voltage (V_GS(th) typ) | — | 2.2 V |
| Total Gate Charge (Q_g) | — | 31 nC at V_GS = 10 V |
| Input Capacitance (C_iss) | — | 2.33 nF |
| Output Capacitance (C_oss) | — | 600 pF |
| Reverse Transfer Capacitance (C_rss) | — | 34 pF |
| Power Dissipation (P_D) | — | 56 W at Tc = 25 C |
| 動作接合温度 | — | -55 C to +175 C |
| Automotive Qualification | — | AEC-Q101 |
| Avalanche Rating | — | 100% Avalanche Tested |