IPD031N03LGATMA1 vs IPD50N03S4L06ATMA1 Сравнение
Подробное сравнение бок о бок IPD031N03LGATMA1 от Infineon и IPD50N03S4L06ATMA1 от Infineon. Сравните ключевые характеристики, электрические параметры, упаковку, статус жизненного цикла, цены и наличие, чтобы выбрать лучший компонент для ваших требований.
Infineon
IPD031N03LGATMA1 - 30V 90A OptiMOS 3 N-Channel MOSFET | Infineon
IPD031N03LGATMA1 ✓ АктивенСравнение характеристик
| Параметр | IPD031N03LGATMA1 | IPD50N03S4L06ATMA1 |
|---|---|---|
| Бренд | Infineon | Infineon |
| Категория | MOSFETs | MOSFETs |
| Статус жизненного цикла | Активен | Активен |
| Наличие | In Stock | In Stock |
| Цена за единицу (USD) | $0,41 | $0,49 |
| FET Type | N-Channel | N-Channel, Enhancement Mode |
| Technology | MOSFET (Metal Oxide), OptiMOS 3 | — |
| Drain-to-Source Voltage (Vdss) | 30 V | — |
| Continuous Drain Current (Id) @ 25 °C | 90 A (Tc) | — |
| Power Dissipation (Pd) | 94 W (Tc) | — |
| RDS(on) Max @ VGS=10V | 3.1 mΩ | — |
| RDS(on) Max @ VGS=4.5V | [DATA_NEEDED: RDS(on) @ 4.5V] | — |
| Gate Threshold Voltage (Vgs(th)) | [DATA_NEEDED: Vgs(th) typical/max] | — |
| Drive Voltage (Max RDS(on), Min RDS(on)) | 4.5 V, 10 V | — |
| Gate Charge (Qg) | [DATA_NEEDED: Qg typical @ 10V Vgs] | — |
| Output Charge (Qoss) | Ultra low (per datasheet tagline) | — |
| Рабочая температура | -55 °C to +175 °C (junction) | — |
| Корпус | PG-TO252-3-11 (DPAK-2) | PG-TO252-3-11 (DPAK), 3-pin (2 + tab), surface mount |
| Тип монтажа | Surface Mount | Surface Mount |
| Mounting Tab | Drain (electrically connected) | — |
| Avalanche Energy Rated | Yes (per OptiMOS 3 datasheet family) | — |
| Статус RoHS | Compliant | Compliant (Green Package) |
| Уровень MSL | 1 | MSL1 (up to 260 C peak reflow) |
| Drain-Source Voltage (V_DS) | — | 30 V |
| Continuous Drain Current (I_D, Tc) | — | 50 A |
| On-State Resistance (R_DS(on) max) | — | 5.5 mOhm at V_GS = 10 V |
| Gate Threshold Voltage (V_GS(th) typ) | — | 2.2 V |
| Total Gate Charge (Q_g) | — | 31 nC at V_GS = 10 V |
| Input Capacitance (C_iss) | — | 2.33 nF |
| Output Capacitance (C_oss) | — | 600 pF |
| Reverse Transfer Capacitance (C_rss) | — | 34 pF |
| Power Dissipation (P_D) | — | 56 W at Tc = 25 C |
| Рабочая температура перехода | — | -55 C to +175 C |
| Automotive Qualification | — | AEC-Q101 |
| Avalanche Rating | — | 100% Avalanche Tested |