IPD30N10S3L34ATMA2 vs IPD35N10S3L26ATMA1 比較
詳細な並列比較: IPD30N10S3L34ATMA2 メーカー: Infineon および IPD35N10S3L26ATMA1 メーカー: Infineon。主要仕様、電気的特性、パッケージ、ライフサイクルステータス、価格、在庫状況を比較して、設計要件に最適な部品を判断してください。
仕様比較
| パラメータ | IPD30N10S3L34ATMA2 | IPD35N10S3L26ATMA1 |
|---|---|---|
| ブランド | Infineon | Infineon |
| カテゴリ | MOSFETs | MOSFETs |
| ライフサイクル状態 | 有効 | 有効 |
| 在庫状況 | In Stock | In Stock |
| 単価（USD） | $0.92 | $0.81 |
| FET Type | N-Channel | — |
| Drain-Source Voltage (V_DS) | 100 V | — |
| Continuous Drain Current (I_D, Tc) | 30 A | — |
| Pulsed Drain Current (I_DM) | 180 A | — |
| Power Dissipation (P_D, Tc) | 57 W | — |
| R_DS(on) max at V_GS=10V | 31 mOhm (typ) | — |
| Gate Threshold Voltage V_GS(th) max | 2.4 V | — |
| Total Gate Charge (Qg) max | 31 nC | — |
| 動作接合温度 | -55 C to +175 C | -55°C to +175°C |
| Package / Supplier Device Package | PG-TO252-3-11 (DPAK) | — |
| 実装タイプ | Surface Mount | Surface Mount |
| Pin / Tab Count | 3 (2 + Tab) | — |
| Technology | OptiMOS-T (trench) | OptiMOS-T (N-channel enhancement mode trench MOSFET) |
| Automotive Qualification | AEC-Q101 | AEC-Q101 qualified |
| MSLレベル | [DATA_NEEDED: MSL level] | MSL1 (up to 260°C peak reflow) |
| RoHS ステータス | Compliant | — |
| Manufacturer | — | Infineon Technologies |
| Part Number | — | IPD35N10S3L26ATMA1 |
| Drain-Source Voltage (VDS) | — | 100 V |
| Continuous Drain Current (ID) at TC=25°C | — | 35 A |
| Pulsed Drain Current (IDM) | — | 180 A |
| On-Resistance RDS(on) max at VGS=10 V | — | 26 mΩ |
| Gate-Source Threshold Voltage (VGS(th)) | — | 1.7 V |
| Continuous Power Dissipation (PD) at TC=25°C | — | 71 W |
| パッケージ | — | PG-TO252-3-11 (DPAK-2) |
| Avalanche Tested | — | 100% avalanche tested |
| RoHS / Halogen-Free | — | RoHS compliant, Green product (halogen-free) |
| Typical Gate Charge (Qg) | — | [DATA_NEEDED: typical Qg from datasheet] |