IPD50N04S408ATMA1 vs IPD50N06S409ATMA2 比較
詳細な並列比較: IPD50N04S408ATMA1 メーカー: Infineon および IPD50N06S409ATMA2 メーカー: Infineon。主要仕様、電気的特性、パッケージ、ライフサイクルステータス、価格、在庫状況を比較して、設計要件に最適な部品を判断してください。
仕様比較
| パラメータ | IPD50N04S408ATMA1 | IPD50N06S409ATMA2 |
|---|---|---|
| ブランド | Infineon | Infineon |
| カテゴリ | MOSFETs | MOSFETs |
| ライフサイクル状態 | 有効 | 有効 |
| 在庫状況 | In Stock | In Stock |
| 単価（USD） | $0.69 | $0.49 |
| Manufacturer | Infineon Technologies | — |
| Product Family | OptiMOS-T2 | — |
| Polarity | N-Channel | — |
| Mode | Enhancement-mode | — |
| Drain-Source Voltage (V DS) | 40 V | — |
| Continuous Drain Current (I D, Tc) | 50 A | — |
| Power Dissipation (P D, Tc) | 46 W | — |
| パッケージ | PG-TO252-3-313 (DPAK) | PG-TO252-3-11 (DPAK) |
| 実装タイプ | Surface Mount | Surface Mount |
| 動作温度範囲 | -55 °C to +175 °C | — |
| MSLレベル | MSL1 (260 °C peak reflow) | — |
| Automotive Qualification | AEC-Q101 | AEC-Q101 |
| Avalanche Tested | 100 % Avalanche tested | — |
| Green Package (RoHS) | RoHS compliant | — |
| Gate Threshold Voltage (V GS(th)) | [DATA_NEEDED: V GS(th) typical] | — |
| On-State Resistance (R DS(on)) | [DATA_NEEDED: R DS(on) at V GS = 10 V] | — |
| Total Gate Charge (Q G) | [DATA_NEEDED: Q G typical] | — |
| Technology | — | N-Channel MOSFET (OptiMOS) |
| Drain-Source Voltage (VDS) | — | 60 V |
| Continuous Drain Current (ID) at Tc | — | 50 A |
| On-Resistance R<sub>DS(on)</sub> max at VGS=10V | — | 9 mΩ |
| Gate-Source Voltage (VGS) max | — | [DATA_NEEDED: VGS max rating] |
| Gate Threshold Voltage (VGS(th)) | — | [DATA_NEEDED: VGS(th) typical] |
| Total Gate Charge (Qg) | — | [DATA_NEEDED: Qg typical] |
| Power Dissipation (Pd) at Tc | — | 71 W |
| 動作接合温度 | — | -55 °C to +175 °C |
| ピン数 | — | 3 (2 + Tab) |
| RoHS ステータス | — | Compliant |
| Lead-Free / Halogen-Free | — | [DATA_NEEDED] |