IPD65R380E6ATMA1 vs IPD60R600C6ATMA1 比較
詳細な並列比較: IPD65R380E6ATMA1 メーカー: Infineon および IPD60R600C6ATMA1 メーカー: Infineon。主要仕様、電気的特性、パッケージ、ライフサイクルステータス、価格、在庫状況を比較して、設計要件に最適な部品を判断してください。
仕様比較
| パラメータ | IPD65R380E6ATMA1 | IPD60R600C6ATMA1 |
|---|---|---|
| ブランド | Infineon | Infineon |
| カテゴリ | MOSFETs | MOSFETs |
| ライフサイクル状態 | 有効 | 有効 |
| 在庫状況 | In Stock | In Stock |
| 単価（USD） | $0.65 | $0.92 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Series | CoolMOS™ E6 | CoolMOS C6 |
| トランジスタタイプ | N-Channel MOSFET | N-Channel MOSFET |
| Technology | Superjunction (CoolMOS™) | CoolMOS C6 (Superjunction) |
| Drain-Source Voltage (V_DS) | 650 V | — |
| Continuous Drain Current (I_D) at T_C | 10.6 A | — |
| R_DS(on) max at V_GS=10V | 380 mΩ | — |
| R_DS(on) test conditions | 3.2 A, 10 V | — |
| Gate-Source Voltage (V_GS) max | ±20 V | — |
| Gate Threshold Voltage (V_GS(th)) | 3.5 V typ | — |
| Gate Charge (Q_G) | 39 nC at 10 V | — |
| Input Capacitance (C_iss) | 710 pF at 100 V | — |
| Power Dissipation (P_D) at T_C | 83 W | — |
| 動作温度範囲 | -55 °C to +150 °C | -55 °C to +150 °C |
| パッケージ | PG-TO252-3 (DPAK), surface mount | PG-TO252-3 (DPAK) |
| 実装タイプ | Surface Mount | Surface Mount |
| RoHS ステータス | Compliant | Compliant |
| MSLレベル | 1 | 1 |
| Part Suffix | — | ATMA1 (Tape & Reel) |
| Drain-Source Voltage (VDS) | — | 600 V |
| Gate-Source Voltage (VGS) Max | — | ±20 V |
| Continuous Drain Current (ID) at TC=25°C | — | 7.3 A |
| Continuous Drain Current (ID) at TC=100°C | — | [DATA_NEEDED: ID at TC=100°C] |
| Pulsed Drain Current (IDM) | — | [DATA_NEEDED: IDM] |
| On-Resistance RDS(on) Max at VGS=10V | — | 600 mΩ |
| Total Power Dissipation (Ptot) at TC=25°C | — | 63 W |
| Gate Threshold Voltage (VGS(th)) | — | [DATA_NEEDED: VGS(th)] |
| ピン数 | — | 3 (Gate, Drain, Source) |