IPD90N06S407ATMA2 vs IPD30N06S2L13ATMA4 比較

詳細な並列比較: IPD90N06S407ATMA2 メーカー: Infineon および IPD30N06S2L13ATMA4 メーカー: Infineon。主要仕様、電気的特性、パッケージ、ライフサイクルステータス、価格、在庫状況を比較して、設計要件に最適な部品を判断してください。

Infineon
IPD90N06S407ATMA2 IPD90N06S407ATMA2 - 60V 90A N-Ch MOSFET | Infineon

IPD90N06S407ATMA2 - 60V 90A N-Ch MOSFET | Infineon

IPD90N06S407ATMA2 ✓ 生産中
Infineon
IPD30N06S2L13ATMA4 IPD30N06S2L13ATMA4 - 55V 30A N-Channel OptiMOS MOSFET | Infineon

IPD30N06S2L13ATMA4 - 55V 30A N-Channel OptiMOS MOSFET | Infineon

IPD30N06S2L13ATMA4 ✓ 生産中

仕様比較

パラメータ IPD90N06S407ATMA2 IPD30N06S2L13ATMA4
ブランド Infineon Infineon
カテゴリ MOSFETs MOSFETs
ライフサイクル状態 有効 有効
在庫状況 In Stock In Stock
単価(USD) $0.84 $0.48
FET Type N-Channel Enhancement Mode —
Drain-to-Source Voltage (V_DS) 60 V —
Continuous Drain Current (I_D at T_C) 90 A —
Pulsed Drain Current (I_DM) [DATA_NEEDED: pulsed drain current] —
R_DS(on) Max at V_GS=10 V, I_D=90 A 6.9 mOhm —
Gate Threshold Voltage (V_GS(th)) 4 V at 40 uA —
Total Gate Charge (Q_G) at V_GS=10 V 56 nC —
Maximum Power Dissipation (P_D at T_C) 79 W —
動作接合温度 -55 C to +175 C —
Storage Temperature [DATA_NEEDED: storage temperature range] —
パッケージ PG-TO252-3-11 (DPAK) PG-TO252-3-11 (DPAK)
実装タイプ Surface Mount Surface Mount
Lead-Free / RoHS Yes (Green Product) Yes (Green Package)
MSL (Moisture Sensitivity Level) MSL1 (up to 260 C peak reflow) MSL1 (per JEDEC J-STD-020, up to 260 °C peak reflow)
Automotive Qualification AEC-Q101 Qualified AEC-Q101 qualified
Avalanche Rating 100% Avalanche Tested —
Manufacturer — Infineon Technologies
Part Family — OptiMOS
Channel Type — N-Channel
Mode — Enhancement
Drain-Source Voltage (Vds) — 55 V
Continuous Drain Current (Id) — 30 A (Tc)
Power Dissipation (Pd) — 136 W (Tc)
動作温度 — -55 °C to +175 °C (Tj)
Avalanche Tested — 100 % production-tested
Technology — Planar (OptiMOS)
On-State Resistance (Rds(on)) — [DATA_NEEDED: exact typ/max Rds(on) at Vgs=10V and at Vgs=4.5V]
Gate-Source Threshold (Vgs(th)) — Logic-level (typ [DATA_NEEDED: Vth typ/min/max])
Total Gate Charge (Qg) — [DATA_NEEDED: Qg @ Vgs=10V, Id=30A]
Input Capacitance (Ciss) — [DATA_NEEDED: Ciss typ at Vds=25V]
Diode Reverse Recovery (trr) — [DATA_NEEDED: trr typ]
ピン数 — 3 (Drain tab + Gate + Source)
Tape and Reel Packaging — Yes (T&R per IEC 60286-3)

データシート&リソース

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