IPD90N06S407ATMA2 vs IPD70N10S312ATMA2 比較
詳細な並列比較: IPD90N06S407ATMA2 メーカー: Infineon および IPD70N10S312ATMA2 メーカー: Infineon。主要仕様、電気的特性、パッケージ、ライフサイクルステータス、価格、在庫状況を比較して、設計要件に最適な部品を判断してください。
仕様比較
| パラメータ | IPD90N06S407ATMA2 | IPD70N10S312ATMA2 |
|---|---|---|
| ブランド | Infineon | Infineon |
| カテゴリ | MOSFETs | MOSFETs |
| ライフサイクル状態 | 有効 | 有効 |
| 在庫状況 | In Stock | In Stock |
| 単価（USD） | $0.84 | $0.69 |
| FET Type | N-Channel Enhancement Mode | — |
| Drain-to-Source Voltage (V_DS) | 60 V | — |
| Continuous Drain Current (I_D at T_C) | 90 A | — |
| Pulsed Drain Current (I_DM) | [DATA_NEEDED: pulsed drain current] | — |
| R_DS(on) Max at V_GS=10 V, I_D=90 A | 6.9 mOhm | — |
| Gate Threshold Voltage (V_GS(th)) | 4 V at 40 uA | — |
| Total Gate Charge (Q_G) at V_GS=10 V | 56 nC | — |
| Maximum Power Dissipation (P_D at T_C) | 79 W | — |
| 動作接合温度 | -55 C to +175 C | — |
| Storage Temperature | [DATA_NEEDED: storage temperature range] | — |
| パッケージ | PG-TO252-3-11 (DPAK) | PG-TO252-3-11 (DPAK) |
| 実装タイプ | Surface Mount | Surface Mount |
| Lead-Free / RoHS | Yes (Green Product) | — |
| MSL (Moisture Sensitivity Level) | MSL1 (up to 260 C peak reflow) | — |
| Automotive Qualification | AEC-Q101 Qualified | — |
| Avalanche Rating | 100% Avalanche Tested | — |
| Manufacturer | — | Infineon Technologies |
| Part Number | — | IPD70N10S312ATMA2 |
| Technology | — | OptiMOS-T Power-MOSFET (N-Channel) |
| Drain-Source Voltage (VDS) | — | 100 V |
| Continuous Drain Current (ID, Tc) | — | 70 A |
| Power Dissipation (Ptot, Tc=25C) | — | 125 W |
| On-State Resistance RDS(on) | — | [DATA_NEEDED: typical RDS(on) at VGS=10V] |
| Gate-Source Voltage (VGS) | — | ±20 V |
| Gate Threshold Voltage (VGS(th)) | — | [DATA_NEEDED: VGS(th) typical value] |
| 動作温度範囲 | — | -55C to +175C |
| ピン数 | — | 3 (Gate, Drain, Source) |
| Channel Type | — | N-Channel Enhancement Mode |
| RoHS ステータス | — | Compliant |
| MSLレベル | — | 1 (unlimited floor life) |
| Avalanche Rated | — | Yes |