IQE012N03LM5CGATMA1 vs IQE031N08LM6CGSCATMA1 比較
詳細な並列比較: IQE012N03LM5CGATMA1 メーカー: Infineon および IQE031N08LM6CGSCATMA1 メーカー: Infineon。主要仕様、電気的特性、パッケージ、ライフサイクルステータス、価格、在庫状況を比較して、設計要件に最適な部品を判断してください。
Infineon
IQE031N08LM6CGSCATMA1 - 80V OptiMOS 6 N-Ch MOSFET 127A | Infineon
IQE031N08LM6CGSCATMA1 ✓ 生産中仕様比較
| パラメータ | IQE012N03LM5CGATMA1 | IQE031N08LM6CGSCATMA1 |
|---|---|---|
| ブランド | Infineon | Infineon |
| カテゴリ | MOSFETs | MOSFETs |
| ライフサイクル状態 | 有効 | 有効 |
| 在庫状況 | In Stock | In Stock |
| 単価（USD） | $1.38 | $0.74 |
| FET Type | N-Channel | — |
| Drain-Source Voltage (VDS) | 30 V | — |
| Continuous Drain Current (ID, Ta) | 34 A | — |
| Pulsed Drain Current (IDM, Tc) | 224 A | — |
| On-Resistance RDS(on), typ | 1.20 mOhm | — |
| Gate-Source Threshold VGS(th) | 1.0 V to 2.4 V (typ, OptiMOS 5 logic-level) | — |
| Power Dissipation (Ta) | 2.5 W | — |
| Power Dissipation (Tc) | 107 W | — |
| Technology / Process | OptiMOS 5 trench | — |
| パッケージ | PG-TTFN-9-3 (PQFN 3.3x3.3 Source-Down, center-gate) | PG-WHTFN-9 (PQFN 3.3x3.3 Source-Down Center-Gate) |
| 実装タイプ | Surface Mount | Surface Mount |
| 動作温度 | -55 C to +150 C (TJ) | — |
| Gate Drive (recommended) | 10 V (logic-level compatible) | — |
| RoHS ステータス | Compliant | Compliant |
| MSLレベル | 1 | 1 (per JEDEC J-STD-020, typical for Infineon PQFN) |
| Manufacturer | — | Infineon Technologies |
| Product Family | — | OptiMOS 6 (40 V to 100 V) |
| Polarity / Channel Type | — | N-Channel |
| Drain-to-Source Voltage (VDS max) | — | 80 V |
| Continuous Drain Current (ID) at Ta=25C | — | 18 A |
| Continuous Drain Current (ID) at Tc | — | 127 A |
| Power Dissipation (PD) at Ta=25C | — | 2.5 W |
| Power Dissipation (PD) at Tc | — | 125 W |
| Gate Threshold Voltage (VGS(th)) | — | [DATA_NEEDED: VGS(th) typical value] |
| On-State Resistance RDS(on) max | — | [DATA_NEEDED: RDS(on) at VGS=10 V] |
| Gate Drive Level | — | Logic-level |
| 動作温度範囲 | — | -55 C to +175 C (junction, typical for OptiMOS 6) |
| Avalanche Tested | — | 100% avalanche tested |
| Lead-Free | — | Yes |