IQE013N04LM6ATMA1 vs IQE008N03LM5SCATMA1 比較
詳細な並列比較: IQE013N04LM6ATMA1 メーカー: Infineon および IQE008N03LM5SCATMA1 メーカー: Infineon。主要仕様、電気的特性、パッケージ、ライフサイクルステータス、価格、在庫状況を比較して、設計要件に最適な部品を判断してください。
Infineon
IQE013N04LM6ATMA1 - 40V 1.35mΩ OptiMOS N-FET, PQFN 3.3x3.3 | Infineon
IQE013N04LM6ATMA1 ✓ 生産中
仕様比較
| パラメータ | IQE013N04LM6ATMA1 | IQE008N03LM5SCATMA1 |
|---|---|---|
| ブランド | Infineon | Infineon |
| カテゴリ | MOSFETs | MOSFETs |
| ライフサイクル状態 | 有効 | 有効 |
| 在庫状況 | In Stock | In Stock |
| 単価（USD） | $0.71 | $1.18 |
| Technology | OptiMOS N-channel trench MOSFET | Trench MOSFET (N-Channel) |
| Polarity | N-Channel | — |
| Drain-Source Voltage (VDS) | 40 V | 30 V |
| Gate-Source Voltage (VGS) | ±20 V | — |
| Continuous Drain Current (Ta) | 31 A | — |
| Continuous Drain Current (Tc) | 205 A | — |
| Power Dissipation (Ta) | 2.5 W | — |
| Power Dissipation (Tc) | 107 W | — |
| On-Resistance RDS(on) max | [DATA_NEEDED: RDS(on) max value at VGS=10V] | — |
| On-Resistance RDS(on) typ | 1.35 mΩ @ VGS=10 V, ID=20 A | — |
| Gate Threshold Voltage (VGS(th)) | 2 V (typ) | 2 V (typical) |
| パッケージ | PG-TSON-8-4 / PQFN 3.3x3.3 mm Source-Down | PG-WHSON-8 (Source-Down) |
| 動作温度範囲 | -55 °C to +175 °C | -55 °C to +150 °C |
| 実装タイプ | Surface Mount | Surface Mount |
| RoHS ステータス | Compliant | Compliant |
| Source-Down Topology | Yes (flip-chip die attach, drain on top thermal pad) | — |
| Manufacturer | — | Infineon Technologies |
| Product Family | — | OptiMOS 5 |
| Continuous Drain Current (ID) | — | 252 A |
| On-Resistance (RDS(on)) max | — | 0.85 mΩ at VGS = 10 V |
| Gate Drive Voltage | — | 10 V (recommended) |
| Configuration | — | Single N-Channel |
| Cooling Architecture | — | Source-Down, dual-side cooling |
| MSLレベル | — | [DATA_NEEDED: MSL rating] |
| Total Gate Charge (Qg) | — | [DATA_NEEDED: Qg total] |
| Input Capacitance (Ciss) | — | [DATA_NEEDED: Ciss] |