IQE022N06LM5CGATMA1 vs IQDH35N03LM5SCATMA1 比較
詳細な並列比較: IQE022N06LM5CGATMA1 メーカー: Infineon および IQDH35N03LM5SCATMA1 メーカー: Infineon。主要仕様、電気的特性、パッケージ、ライフサイクルステータス、価格、在庫状況を比較して、設計要件に最適な部品を判断してください。
Infineon
IQE022N06LM5CGATMA1 - 60V OptiMOS 5 N-Ch MOSFET, 2.2mΩ | Infineon
IQE022N06LM5CGATMA1 ✓ 生産中仕様比較
| パラメータ | IQE022N06LM5CGATMA1 | IQDH35N03LM5SCATMA1 |
|---|---|---|
| ブランド | Infineon | Infineon |
| カテゴリ | MOSFETs | MOSFETs |
| ライフサイクル状態 | 有効 | 有効 |
| 在庫状況 | In Stock | In Stock |
| 単価（USD） | $0.78 | $2.05 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Part Family | OptiMOS 5 | — |
| Technology | N-Channel Power MOSFET (Enhancement Mode) | OptiMOS 5 (trench, shielded-gate) |
| Drain-Source Voltage (V_DS) | 60 V | — |
| Continuous Drain Current (I_D) at T_A=25C | 24 A | — |
| Continuous Drain Current (I_D) at T_C=25C | 151 A | — |
| R_DS(on) (typical, V_GS=10V) | 2.2 mΩ | — |
| Gate-Source Voltage (V_GS) max | [DATA_NEEDED: V_GS max rating] | — |
| Gate Threshold Voltage (V_GS(th)) | [DATA_NEEDED: V_GS(th) value] | — |
| Total Gate Charge (Q_G) | [DATA_NEEDED: Q_G value] | — |
| Power Dissipation (T_A) | 2.5 W | — |
| Power Dissipation (T_C) | 100 W | — |
| 動作温度範囲 | -55C to +150C | -55 C to +175 C |
| パッケージ | PG-TTFN-9-3 (PQFN 3.3x3.3 mm) | PG-WHSON-8-U02 (PQFN 5x6 Source-Down, 8-pin) |
| 実装タイプ | Surface Mount | Surface Mount |
| ピン数 | 9 (with exposed thermal pad) | — |
| RoHS ステータス | Compliant | Compliant |
| Lead-Free | Yes | — |
| トランジスタタイプ | — | N-Channel MOSFET |
| Drain-Source Voltage (VDS) max | — | 30 V |
| Gate-Source Voltage (VGS) max | — | ±20 V |
| Continuous Drain Current (ID) at Ta | — | 66 A |
| Pulsed Drain Current (IDM) at Tc | — | 700 A |
| On-State Resistance (RDS(on)) max | — | 0.35 mOhm @ VGS=10V |
| Power Dissipation (PD) at Ta | — | 2.5 W |
| Power Dissipation (PD) at Tc | — | 278 W |
| MSLレベル | — | 1 (unlimited) |
| Marking | — | IQDH35N03LM5S |