IQE022N06LM5CGATMA1 vs IQDH35N03LM5SCATMA1 Comparison
Detailed side-by-side comparison of IQE022N06LM5CGATMA1 by Infineon and IQDH35N03LM5SCATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
IQE022N06LM5CGATMA1 - 60V OptiMOS 5 N-Ch MOSFET, 2.2mΩ | Infineon
IQE022N06LM5CGATMA1 ✓ ActiveInfineon
IQDH35N03LM5SCATMA1 - 30V 700A N-Ch OptiMOS 5 MOSFET | Infineon
IQDH35N03LM5SCATMA1 ✓ ActiveSpecification Comparison
| Parameter | IQE022N06LM5CGATMA1 | IQDH35N03LM5SCATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Part Family | OptiMOS 5 | — |
| Technology | N-Channel Power MOSFET (Enhancement Mode) | OptiMOS 5 (trench, shielded-gate) |
| Drain-Source Voltage (V_DS) | 60 V | — |
| Continuous Drain Current (I_D) at T_A=25C | 24 A | — |
| Continuous Drain Current (I_D) at T_C=25C | 151 A | — |
| R_DS(on) (typical, V_GS=10V) | 2.2 mΩ | — |
| Gate-Source Voltage (V_GS) max | [DATA_NEEDED: V_GS max rating] | — |
| Gate Threshold Voltage (V_GS(th)) | [DATA_NEEDED: V_GS(th) value] | — |
| Total Gate Charge (Q_G) | [DATA_NEEDED: Q_G value] | — |
| Power Dissipation (T_A) | 2.5 W | — |
| Power Dissipation (T_C) | 100 W | — |
| Operating Temperature Range | -55C to +150C | -55 C to +175 C |
| Package | PG-TTFN-9-3 (PQFN 3.3x3.3 mm) | PG-WHSON-8-U02 (PQFN 5x6 Source-Down, 8-pin) |
| Mounting Type | Surface Mount | Surface Mount |
| Pin Count | 9 (with exposed thermal pad) | — |
| RoHS Status | Compliant | Compliant |
| Lead-Free | Yes | — |
| Transistor Type | — | N-Channel MOSFET |
| Drain-Source Voltage (VDS) max | — | 30 V |
| Gate-Source Voltage (VGS) max | — | ±20 V |
| Continuous Drain Current (ID) at Ta | — | 66 A |
| Pulsed Drain Current (IDM) at Tc | — | 700 A |
| On-State Resistance (RDS(on)) max | — | 0.35 mOhm @ VGS=10V |
| Power Dissipation (PD) at Ta | — | 2.5 W |
| Power Dissipation (PD) at Tc | — | 278 W |
| MSL Level | — | 1 (unlimited) |
| Marking | — | IQDH35N03LM5S |