IQEH50NE2LM7ZCGATMA1 vs IQEH50NE2LM7UCGSCATMA1 比較
詳細な並列比較: IQEH50NE2LM7ZCGATMA1 メーカー: Infineon および IQEH50NE2LM7UCGSCATMA1 メーカー: Infineon。主要仕様、電気的特性、パッケージ、ライフサイクルステータス、価格、在庫状況を比較して、設計要件に最適な部品を判断してください。
Infineon
IQEH50NE2LM7ZCGATMA1 - 25V 422A OptiMOS 7 N-Channel MOSFET | Infineon
IQEH50NE2LM7ZCGATMA1 ✓ 生産中仕様比較
| パラメータ | IQEH50NE2LM7ZCGATMA1 | IQEH50NE2LM7UCGSCATMA1 |
|---|---|---|
| ブランド | Infineon | Infineon |
| カテゴリ | MOSFETs | MOSFETs |
| ライフサイクル状態 | 有効 | 有効 |
| 在庫状況 | In Stock | In Stock |
| 単価（USD） | $1.42 | $1.78 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Product Family | OptiMOS 7 Power-Transistor | OptiMOS 7 Power-Transistor |
| Polarity / Channel Type | N-Channel | — |
| Drain-Source Voltage (Vds) Max | 25 V | — |
| Continuous Drain Current (Ta) | 54 A | — |
| Continuous Drain Current (Tc) | 422 A | — |
| Maximum On-Resistance (Rds(on)) | 0.5 mOhm | — |
| Gate Threshold Voltage (Vgs(th)) | 1.7 V | — |
| Power Dissipation (Ta) | 2.5 W | — |
| Power Dissipation (Tc) | 150 W | — |
| Maximum Junction Temperature | +175 degrees C | 175 °C |
| 動作温度範囲 | -55 degrees C to +175 degrees C | — |
| パッケージ | PG-TTFN-9-3 | PG-WHTFN-9-1 (surface mount) |
| 実装タイプ | Surface Mount | Surface Mount |
| Technology | OptiMOS 7 (Trench-Gate) | Silicon N-Channel Power MOSFET |
| RoHS ステータス | Compliant | — |
| Qualification | Industrial grade per Infineon datasheet | — |
| トランジスタタイプ | — | N-Channel MOSFET |
| Drain-Source Voltage (VDS) Max | — | 25 V |
| Continuous Drain Current (ID) at TA | — | 54 A |
| Continuous Drain Current (ID) at TC | — | 422 A |
| RDS(on) Max | — | 0.5 mΩ |
| Gate Threshold Voltage (VGS(th)) typ | — | 2 V |
| Power Dissipation (PD) at TA | — | 2.5 W |
| Power Dissipation (PD) at TC | — | 150 W |
| Series | — | OptiMOS 7 |