IRF9Z34NPBF vs IRLU024NPBF 比較

詳細な並列比較: IRF9Z34NPBF メーカー: Infineon および IRLU024NPBF メーカー: Infineon。主要仕様、電気的特性、パッケージ、ライフサイクルステータス、価格、在庫状況を比較して、設計要件に最適な部品を判断してください。

仕様比較

パラメータ IRF9Z34NPBF IRLU024NPBF
ブランド Infineon Infineon
カテゴリ MOSFETs MOSFETs
ライフサイクル状態 有効 有効
在庫状況 In Stock In Stock
単価(USD) $0.65 $0.61
Manufacturer Infineon Technologies (formerly International Rectifier) Infineon Technologies (formerly International Rectifier)
Polarity / Channel Type P-Channel —
Drain-Source Voltage (Vds) -55 V —
Continuous Drain Current (Id) at Tc=25C -19 A —
Pulsed Drain Current (Idm) -72 A —
Power Dissipation (Pd) at Tc=25C 68 W —
On-Resistance Rds(on) at Vgs=-10V 100 milliohm (typical) —
Gate Threshold Voltage (Vgs(th)) [DATA_NEEDED: Vgs(th) typical/min/max] —
Gate Charge (Qg) 23.3 nC (per Mouser listing) —
Input Capacitance (Ciss) [DATA_NEEDED: Ciss] —
動作温度範囲 -55C to +175C (junction) —
パッケージ TO-220AB (through-hole, 3-pin) IPAK (TO-251AA), Through Hole
実装タイプ Through Hole Through Hole
Pinout (G-D-S) Pin 1 Gate, Pin 2 Drain (tab), Pin 3 Source —
Technology HEXFET (5th generation) HEXFET Power MOSFET (5th generation)
Lead-Free / Halogen-Free Yes (PBF suffix) —
RoHS ステータス Compliant —
Part Number — IRLU024NPBF
FET Type — N-Channel, Logic-Level
Drain-to-Source Voltage (VDS) — 55 V
Continuous Drain Current (ID) at TC=25C — 17 A
Pulsed Drain Current (IDM) — [DATA_NEEDED: IDM]
On-Resistance RDS(on) max at VGS=10V — 65 mOhm
On-Resistance RDS(on) max at VGS=5V — [DATA_NEEDED: RDS(on) at VGS=5V]
Gate Threshold Voltage VGS(th) — [DATA_NEEDED: VGS(th) min/typ/max]
Total Gate Charge (Qg) — 10 nC (typical, per listing)
Power Dissipation (PD) at TC=25C — 45 W
Thermal Resistance Junction-to-Case (RthJC) — 3.3 C/W
Thermal Resistance Junction-to-Ambient (RthJA) — 110 C/W (50 C/W PCB-mounted)
動作接合温度 — -55C to +175C
Lead-Free / RoHS — Yes (PBF suffix indicates lead-free plating)
Qualification — JEDEC standard
Gate Drive Voltage (optimized) — 10 V (capable of 4.5 V)

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