IRFP3710PBF vs IRFB4020PBF 比較
詳細な並列比較: IRFP3710PBF メーカー: Infineon および IRFB4020PBF メーカー: Infineon。主要仕様、電気的特性、パッケージ、ライフサイクルステータス、価格、在庫状況を比較して、設計要件に最適な部品を判断してください。
仕様比較
| パラメータ | IRFP3710PBF | IRFB4020PBF |
|---|---|---|
| ブランド | Infineon | Infineon |
| カテゴリ | MOSFETs | MOSFETs |
| ライフサイクル状態 | 有効 | 有効 |
| 在庫状況 | In Stock | In Stock |
| 単価（USD） | $1.86 | $1.38 |
| Manufacturer | Infineon Technologies (formerly International Rectifier) | — |
| Series | HEXFET, Fifth Generation | — |
| FET Type | N-Channel | N-Channel |
| Drain-to-Source Voltage (VDS) | 100 V | — |
| Continuous Drain Current (ID) | 57 A (Tc) | — |
| Power Dissipation (PD) | 200 W (Tc) | — |
| On-Resistance RDS(on) Max | 25 mOhm at VGS = 10 V | — |
| Gate Charge (Qg) Typical | 66.7 nC | — |
| Gate-to-Source Voltage Max | ±20 V | — |
| 動作温度範囲 | -55C to +175C (Tj) | — |
| パッケージ | TO-247AC (3-pin + tab) | TO-220AB (through-hole) |
| 実装タイプ | Through Hole | Through Hole |
| Avalanche Rating | Fully Avalanche Rated | — |
| dv/dt Rating | Dynamic dv/dt Rated | — |
| Lead-Free | Yes | — |
| RoHS ステータス | Compliant | — |
| Technology | IR MOSFET (HEXFET) | IR MOSFET (HEXFET) |
| Drain-Source Voltage (VDS) | — | 200 V |
| Continuous Drain Current (ID) at TC | — | 18 A |
| Power Dissipation (PD) at TC | — | 100 W |
| RDS(on) Maximum | — | 100 mOhm |
| Gate-Source Voltage (VGS) Maximum | — | 20 V |
| Thermal Resistance, Junction-to-Case (RthJC) | — | 1.43 C/W |
| 動作接合温度 | — | 175 C (max) |
| ピン数 | — | 3 (Gate, Drain, Source) |
| Lead-Free (PbF suffix) | — | Yes |
| Market Qualification | — | Consumer |
| Recommended Use | — | Class-D audio amplifier and high-efficiency switching applications |