IRFR4615TRLPBF vs IRFR3411TRPBF 比較
詳細な並列比較: IRFR4615TRLPBF メーカー: Infineon および IRFR3411TRPBF メーカー: Infineon。主要仕様、電気的特性、パッケージ、ライフサイクルステータス、価格、在庫状況を比較して、設計要件に最適な部品を判断してください。
仕様比較
| パラメータ | IRFR4615TRLPBF | IRFR3411TRPBF |
|---|---|---|
| ブランド | Infineon | Infineon |
| カテゴリ | MOSFETs | MOSFETs |
| ライフサイクル状態 | 有効 | 有効 |
| 在庫状況 | In Stock | In Stock |
| 単価（USD） | $0.39 | $0.55 |
| Technology | IR MOSFET (N-Channel Enhancement Mode) | HEXFET Power MOSFET (IR) |
| Drain-Source Voltage (VDS) | 150 V | — |
| Continuous Drain Current (ID) at TC=25C | 33 A | — |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: pulsed drain current] | — |
| Gate-Source Voltage (VGS) max | [DATA_NEEDED: VGS max] | — |
| On-Resistance RDS(on) max at VGS=10V | 42 mOhm | — |
| Total Gate Charge (Qg) | 26 nC | — |
| Gate-Source Charge (Qgs) | [DATA_NEEDED: Qgs] | — |
| Gate-Drain Charge (Qgd) | [DATA_NEEDED: Qgd] | — |
| Power Dissipation (PD) at TC=25C | 144 W | — |
| Avalanche Energy (EAS) | 109 mJ | — |
| 動作温度範囲 | -55C to +175C | -55 C to +175 C |
| パッケージ | TO-252AA (DPAK) | TO-252AA (DPAK) |
| 実装タイプ | Surface Mount | Surface Mount |
| Lead-Free / RoHS | Yes (PBF suffix indicates Pb-free) | Yes (Lead-free, PBF suffix) |
| 単一パルスアバランシェエネルギー | 109 mJ | — |
| Polarity | — | N-Channel |
| FET Type | — | MOSFET (Metal Oxide) |
| V(BR)DSS (Drain-Source Breakdown Voltage) | — | 100 V |
| RDS(on) max @ VGS=10V | — | 44 mOhm |
| Continuous Drain Current (Id) @ Tc | — | 32 A |
| Pulsed Drain Current (Idm) | — | [DATA_NEEDED: pulsed drain current] |
| Power Dissipation (Pd) @ Tc | — | 130 W |
| Gate Charge (Qg) | — | 48 nC |
| Operating Mode | — | Enhancement |
| Maximum Junction Temperature | — | 175 C |
| ピン数 | — | 3 |
| Avalanche Rated | — | Yes (fully avalanche rated) |
| dv/dt Rating | — | Dynamic dv/dt rated |