IRFR4615TRLPBF vs IRLB3813PBF 比較
詳細な並列比較: IRFR4615TRLPBF メーカー: Infineon および IRLB3813PBF メーカー: Infineon。主要仕様、電気的特性、パッケージ、ライフサイクルステータス、価格、在庫状況を比較して、設計要件に最適な部品を判断してください。
仕様比較
| パラメータ | IRFR4615TRLPBF | IRLB3813PBF |
|---|---|---|
| ブランド | Infineon | Infineon |
| カテゴリ | MOSFETs | MOSFETs |
| ライフサイクル状態 | 有効 | 有効 |
| 在庫状況 | In Stock | In Stock |
| 単価（USD） | $0.39 | $1.42 |
| Technology | IR MOSFET (N-Channel Enhancement Mode) | StrongIRFET (HEXFET) |
| Drain-Source Voltage (VDS) | 150 V | 30 V |
| Continuous Drain Current (ID) at TC=25C | 33 A | — |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: pulsed drain current] | [DATA_NEEDED: IDM] |
| Gate-Source Voltage (VGS) max | [DATA_NEEDED: VGS max] | — |
| On-Resistance RDS(on) max at VGS=10V | 42 mOhm | 1.95 mOhm |
| Total Gate Charge (Qg) | 26 nC | 57 nC (typical, per Mouser snippet) |
| Gate-Source Charge (Qgs) | [DATA_NEEDED: Qgs] | — |
| Gate-Drain Charge (Qgd) | [DATA_NEEDED: Qgd] | — |
| Power Dissipation (PD) at TC=25C | 144 W | — |
| Avalanche Energy (EAS) | 109 mJ | — |
| 動作温度範囲 | -55C to +175C | — |
| パッケージ | TO-252AA (DPAK) | TO-220AB (through-hole) |
| 実装タイプ | Surface Mount | Through Hole |
| Lead-Free / RoHS | Yes (PBF suffix indicates Pb-free) | — |
| 単一パルスアバランシェエネルギー | 109 mJ | — |
| FET Type | — | N-Channel |
| Continuous Drain Current (ID) at Tc=25C | — | 260 A |
| Continuous Drain Current (ID) at Tc=100C | — | [DATA_NEEDED: ID at Tc=100C] |
| On-Resistance RDS(on) max at VGS=4.5V | — | [DATA_NEEDED: RDS(on) at VGS=4.5V] |
| Gate-Source Threshold Voltage (VGS(th)) | — | [DATA_NEEDED: VGS(th)] |
| Power Dissipation (PD) at Tc=25C | — | 230 W |
| 動作接合温度 | — | -55C to +175C (industry typical, [DATA_NEEDED for datasheet confirmation]) |
| Gate Drive Level | — | Logic-level (fully enhanced at 4.5 V VGS) |
| Avalanche Rated | — | Yes (per datasheet: fully characterised avalanche voltage and current) |
| Qualification Standard | — | JEDEC (industrial market) |
| RoHS ステータス | — | Compliant (Pb-free suffix PBF) |
| Lead-Free | — | Yes |