IRFR4615TRLPBF vs IRLB3813PBF 비교
다음의 상세 나란히 비교: IRFR4615TRLPBF 제조: Infineon 및 IRLB3813PBF 제조: Infineon. 주요 사양, 전기적 파라미터, 패키징, 수명 주기 상태, 가격 및 재고를 비교하여 설계 요구 사항에 가장 적합한 부품을 결정하십시오.
사양 비교
| 파라미터 | IRFR4615TRLPBF | IRLB3813PBF |
|---|---|---|
| 브랜드 | Infineon | Infineon |
| 카테고리 | MOSFETs | MOSFETs |
| 수명 주기 상태 | 활성 | 활성 |
| 재고 상태 | In Stock | In Stock |
| 단가 (USD) | $0.39 | $1.42 |
| Technology | IR MOSFET (N-Channel Enhancement Mode) | StrongIRFET (HEXFET) |
| Drain-Source Voltage (VDS) | 150 V | 30 V |
| Continuous Drain Current (ID) at TC=25C | 33 A | — |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: pulsed drain current] | [DATA_NEEDED: IDM] |
| Gate-Source Voltage (VGS) max | [DATA_NEEDED: VGS max] | — |
| On-Resistance RDS(on) max at VGS=10V | 42 mOhm | 1.95 mOhm |
| Total Gate Charge (Qg) | 26 nC | 57 nC (typical, per Mouser snippet) |
| Gate-Source Charge (Qgs) | [DATA_NEEDED: Qgs] | — |
| Gate-Drain Charge (Qgd) | [DATA_NEEDED: Qgd] | — |
| Power Dissipation (PD) at TC=25C | 144 W | — |
| Avalanche Energy (EAS) | 109 mJ | — |
| 동작 온도 범위 | -55C to +175C | — |
| 패키지 | TO-252AA (DPAK) | TO-220AB (through-hole) |
| 실장 유형 | Surface Mount | Through Hole |
| Lead-Free / RoHS | Yes (PBF suffix indicates Pb-free) | — |
| 단일 펄스 애벌런치 에너지 | 109 mJ | — |
| FET Type | — | N-Channel |
| Continuous Drain Current (ID) at Tc=25C | — | 260 A |
| Continuous Drain Current (ID) at Tc=100C | — | [DATA_NEEDED: ID at Tc=100C] |
| On-Resistance RDS(on) max at VGS=4.5V | — | [DATA_NEEDED: RDS(on) at VGS=4.5V] |
| Gate-Source Threshold Voltage (VGS(th)) | — | [DATA_NEEDED: VGS(th)] |
| Power Dissipation (PD) at Tc=25C | — | 230 W |
| 동작 접합 온도 | — | -55C to +175C (industry typical, [DATA_NEEDED for datasheet confirmation]) |
| Gate Drive Level | — | Logic-level (fully enhanced at 4.5 V VGS) |
| Avalanche Rated | — | Yes (per datasheet: fully characterised avalanche voltage and current) |
| Qualification Standard | — | JEDEC (industrial market) |
| RoHS 상태 | — | Compliant (Pb-free suffix PBF) |
| Lead-Free | — | Yes |