IRFR5305TRPBF vs IRFR1018ETRPBF 比較
詳細な並列比較: IRFR5305TRPBF メーカー: Infineon および IRFR1018ETRPBF メーカー: Infineon。主要仕様、電気的特性、パッケージ、ライフサイクルステータス、価格、在庫状況を比較して、設計要件に最適な部品を判断してください。
仕様比較
| パラメータ | IRFR5305TRPBF | IRFR1018ETRPBF |
|---|---|---|
| ブランド | Infineon | Infineon |
| カテゴリ | MOSFETs | MOSFETs |
| ライフサイクル状態 | 有効 | 有効 |
| 在庫状況 | In Stock | In Stock |
| 単価（USD） | $0.32 | $0.36 |
| Polarity | P-Channel | — |
| Drain-Source Voltage (VDS) Max | -55 V | — |
| Continuous Drain Current (ID) at TC=25C | 31 A | — |
| Continuous Drain Current (ID) at TC=100C | [DATA_NEEDED: ID at TC=100C] | — |
| On-Resistance (RDS(on)) Max at VGS=-10V | 65 mOhm | — |
| Gate-Source Threshold Voltage (VGS(th)) | -2 V to -4 V | — |
| Gate Charge (Qg) Typ | [DATA_NEEDED: Qg typ] | — |
| Power Dissipation (PD) at TC=25C | 110 W | — |
| Single-Pulse Avalanche Energy (EAS) | 270 mJ | — |
| 動作温度範囲 | -55 C to +175 C | -55 °C to +175 °C |
| パッケージ | TO-252AA (DPAK) | TO-252AA (D-Pak) |
| 実装タイプ | Surface Mount | Surface Mount |
| Technology | HEXFET (IR MOSFET) | HEXFET |
| MSLレベル | 1 | 1 |
| RoHS ステータス | Compliant (Pb-free PBF suffix) | Compliant |
| Lead-Free Finish | Yes (PBF suffix) | — |
| FET Type | — | N-Channel |
| Drain-to-Source Voltage (Vdss) | — | 60 V |
| Continuous Drain Current (Id) | — | 79 A (Tc) |
| Pulsed Drain Current (Idm) | — | [DATA_NEEDED: pulsed drain current] |
| Rds(on) Max @ Vgs=10V | — | 8.4 mΩ |
| Rds(on) Max @ Vgs=4.5V | — | [DATA_NEEDED: Rds(on) at 4.5V] |
| Gate Threshold Voltage (Vgs(th)) | — | 2.0 V to 4.0 V |
| Total Gate Charge (Qg) | — | 46 nC |
| Input Capacitance (Ciss) | — | [DATA_NEEDED: Ciss] |
| Output Capacitance (Coss) | — | [DATA_NEEDED: Coss] |
| Reverse Transfer Capacitance (Crss) | — | [DATA_NEEDED: Crss] |
| Maximum Power Dissipation (Pd) | — | 110 W (Tc) |
| Lead-Free | — | Yes |
| Avalanche Rated | — | Yes |