IRFR1018ETRPBF - 60V 79A 8.4mΩ N-Channel MOSFET | Infineon
部品番号: IRFR1018ETRPBF ✓ 生産中| 数量 | 単価 | 小計 |
|---|---|---|
| 1 | $0.74 | $0.74 |
| 10 | $0.66 | $6.60 |
| 100 | $0.55 | $55.00 |
| 500 | $0.48 | $240.00 |
| 1,000 | $0.42 | $420.00 |
| 2,500 | $0.36 | $900.00 |
IRFR1018ETRPBF 概要
A MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) is a voltage-controlled semiconductor switch used for switching and amplifying electronic signals. N-channel MOSFETs conduct when a positive gate-to-source voltage is applied, offering lower on-resistance per unit silicon area than equivalent P-channel devices. Power MOSFETs belong to the discrete semiconductor hierarchy and sit between signal-level transistors and higher-power IGBT modules in the power electronics stack.
Key features of the IRFR1018ETRPBF include a low typical Rds(on) of 8.4 mΩ at Vgs=10 V, a total gate charge (Qg) of 46 nC enabling fast switching transitions, and 110 W maximum power dissipation at 25 °C case temperature. The device also offers avalanche-rated ruggedness, a logic-level-compatible gate threshold range, and a low thermal-resistance DPAK package that supports high-current operation on FR-4 PCB with adequate copper pour.
Internally the IRFR1018E uses Infineon's HEXFET planar-cell technology, which optimises the trade-off between conduction loss, switching loss, and avalanche energy. The 60 V breakdown rating makes it well suited to 24 V bus telecom and industrial systems as well as 12 V automotive subsystems. The optimized body diode supports synchronous-rectifier topologies where the low-side MOSFET must conduct reverse current during freewheeling intervals.
Typical applications include secondary-side synchronous rectification in isolated DC-DC converters, low-voltage motor-drive H-bridges, solenoid and relay drivers, hot-swap controllers, battery protection circuits in power tools, and OR-ing FETs in redundant power systems. The 8.4 mΩ Rds(on) keeps conduction losses low even at 30-40 A continuous loads.
When designing with this part, ensure the gate-drive voltage comfortably exceeds the maximum threshold voltage (typically 4 V) across all temperature corners - a 10 V gate drive is recommended for full enhancement. Adequate PCB copper area is essential for heat extraction; without it the device will thermally limit well below its 79 A rating.
This page synthesises distributor pricing, drop-in DPAK alternatives, and practical design notes not found in the manufacturer datasheet alone, giving engineers a single-source reference for sourcing and second-sourcing decisions.
ドロップイン代替品: IRFR1018ETRPBF — 同一パッケージでピン互換。PCBの作り直しが必要な異なるパッケージの部品は除外されています。
このシリーズのバリエーション
同一シリーズでドロップイン互換のモデル: IRFR1018ETRPBF （同一形状・フットプリント） — 相違点: Technology, Package, Operating Temperature Range, Drain-Source Voltage (VDS), Avalanche Rated.
クイック比較ツール — 並列比較する代替部品を選択:
IRFR1018EPBF
✅ ドロップイン📋 参考代替品（カタログ未掲載）
AUIRFR1018E
✅ ドロップイン📋 参考代替品（カタログ未掲載）
IRFS4321TRLPBF
✅ ドロップイン✓ 在庫あり
$1.73 / 個
データシートを見る →IRFR5305TRPBF
✅ ドロップイン✓ 在庫あり
$0.32 / 個
データシートを見る →IRFR5410TRPBF
✅ ドロップイン✓ 在庫あり
$0.71 / 個
データシートを見る →SUD50N06-25L
✅ ドロップイン📋 参考代替品（カタログ未掲載）
BSC010NE2LSIATMA1
✅ ドロップイン✓ 在庫あり
$0.92 / 個
データシートを見る →BSC014N04LSIATMA1
✅ ドロップイン✓ 在庫あり
$0.39 / 個
データシートを見る →IRFR1018ETRPBF 最大定格＆電気的特性
| FET Type | N-Channel |
| Drain-to-Source Voltage (Vdss) | 60 V |
| Continuous Drain Current (Id) | 79 A (Tc) |
| Rds(on) Max @ Vgs=10V | 8.4 mΩ |
| Gate Threshold Voltage (Vgs(th)) | 2.0 V to 4.0 V |
| Total Gate Charge (Qg) | 46 nC |
| Maximum Power Dissipation (Pd) | 110 W (Tc) |
| 動作温度範囲 | -55 °C to +175 °C |
| パッケージ | TO-252AA (D-Pak) |
| 実装タイプ | Surface Mount |
| Technology | HEXFET |
| RoHS ステータス | Compliant |
| Lead-Free | Yes |
| MSLレベル | 1 |
| Avalanche Rated | Yes |
IRFR1018ETRPBF ピン構成
| ピン 1 | Gate (G) — MOSFET gate control input; drive with 10V for full enhancement |
| ピン 2 | Drain (D) / Tab — MOSFET drain connection; internally tied to the metal tab on the back of the package |
| ピン 3 | Source (S) — MOSFET source connection; reference for gate drive |
IRFR1018ETRPBF 安全動作領域 (DC)
主な用途
IRFR1018ETRPBF の用途: 7 件s: 24V Industrial DC-DC Synchronous Rectifier, 12V Automotive Load Switch, Power Tool Battery Protection (BMS), Telecom 48V Hot-Swap Controller, Brushed DC Motor Drive H-Bridge, Solar Charge Controller MPPT Stage, Server OR-ing and Redundant Power.
24V Industrial DC-DC Synchronous Rectifier
The IRFR1018ETRPBF is widely used as the low-side synchronous rectifier MOSFET in isolated 24V-input DC-DC converters such as quarter-brick and eighth-brick modules. Its 60V Vdss rating provides ample headroom above 24V nominal (handles 36V transients on industrial buses per IEC 61131-2), and its 8.4mΩ Rds(on) keeps conduction loss below 1W at 20A output current. The 46nC total gate charge allows operation above 200kHz switching frequency without excessive driver loss. Compared to a Schottky diode, two IRFR1018ETRPBFs in a synchronous half-bridge configuration recover full voltage headroom and improve efficiency by 3-5 percentage points across the load range.
おすすめ
12V Automotive Load Switch
In automotive 12V body-electronics and chassis subsystems, the IRFR1018ETRPBF serves as a high-side or low-side load switch for lamps, solenoids, and motor loads drawing 20-50A peak. Its 60V breakdown withstands 24V jump-start events per ISO 7637-2 surge testing, and its 8.4mΩ Rds(on) minimises voltage drop across the switch. The -55°C to +175°C operating range covers under-hood temperature extremes, though for AEC-Q100 qualified designs the AUIRFR1018E variant is preferred. A single IRFR1018ETRPBF can replace a mechanical relay in many applications, providing silent operation, faster switching, and longer lifetime than electromechanical alternatives.
おすすめ
Power Tool Battery Protection (BMS)
Cordless drill, saw, and outdoor power tool battery management systems use the IRFR1018ETRPBF as the discharge control FET between the Li-ion pack and the motor. With 79A continuous current capability, it handles 18V/20V cordless tool peak loads up to 1500W without entering thermal shutdown at 25°C ambient with adequate copper. The low 8.4mΩ Rds(on) keeps voltage drop under 0.4V at 50A, preserving usable battery capacity. The HEXFET avalanche rating also protects against the inductive kickback from brushed motor commutators during turn-off, eliminating the need for a separate flyback diode in many designs.
おすすめ
Telecom 48V Hot-Swap Controller
Telecom -48V bus systems (with positive ground return) require an OR-ing or hot-swap MOSFET capable of interrupting inrush current when a new rectifier module is plugged into a live shelf. The IRFR1018ETRPBF handles this role: its 60V Vdss exceeds the 48V nominal bus with margin for transient ringing, and its 8.4mΩ Rds(on) minimises conduction loss on the high-current path. A single FET can pass 30A continuously in a 1U rectifier module. The fast switching of HEXFET technology enables sub-microsecond fault response, disconnecting a shorted module before upstream breakers trip.
おすすめ
Brushed DC Motor Drive H-Bridge
In brushed DC motor H-bridge drivers for industrial automation, robotics, and small EV traction, the IRFR1018ETRPBF provides the four switching FETs of the bridge. Each FET in the bridge must conduct motor current and block the back-EMF during PWM switching; the 60V breakdown and 79A continuous rating handle 24V/36V motor systems up to 2kW peak. The 46nC Qg permits PWM frequencies above 25kHz for smooth torque control without audible whine. The HEXFET body diode also acts as the freewheeling path during PWM off-time, simplifying gate-driver design versus parts requiring external Schottky clamps.
おすすめ
Solar Charge Controller MPPT Stage
Off-grid and grid-tied solar MPPT (Maximum Power Point Tracking) charge controllers use the IRFR1018ETRPBF as the switching element in buck or boost converters between the PV array and battery bus. Its 60V Vdss covers 24V PV strings with transient spike margin, and its 8.4mΩ Rds(on) enables 95%+ conversion efficiency at moderate switching frequencies (50-100kHz). The avalanche ruggedness of HEXFET technology also protects against the inductive kick from PV array wiring inductance during MPPT sweep operation. For higher-voltage 48V PV strings, the IRFS4321TRLPBF (150V variant) is preferred for additional breakdown headroom.
おすすめ
Server OR-ing and Redundant Power
Data centre server CRPS (Common Redundant Power Supply) modules use OR-ing MOSFETs at the output to combine multiple PSU rails into a single bus without diode losses. The IRFR1018ETRPBF suits 12V server output OR-ing: its 8.4mΩ Rds(on) keeps conduction loss under 0.5W at 60A load, vastly outperforming Schottky OR-ing diodes that would waste 7W. The 60V breakdown withstands hot-swap transients during PSU insertion. In this topology two IRFR1018ETRPBFs (one per PSU) provide reverse-current blocking, and the fast body diode enables sub-millisecond switchover between active PSUs during a fault.
おすすめ
おすすめ製品の概要
エンジニアリング参考データ: IRFR1018ETRPBF — 比較、設計ガイダンス、コンプライアンス情報。
選定ガイド
代替品との比較
| パラメータ | この製品 | IRFR1018EPBF | AUIRFR1018E | IRFS4321TRLPBF | SUD50N06-25L |
|---|---|---|---|---|---|
| Package | TO-252AA (D-Pak) | TO-252AA (D-Pak) - same | TO-252AA (D-Pak) - same | TO-252AA (D-Pak) - same | TO-252AA (D-Pak) - same |
| Brand | Infineon | Infineon | Infineon | Infineon | Vishay Intertechnology |
| Drain-to-Source Voltage (Vdss) | 60 V | 60 V | 60 V | 150 V | 60 V |
| Continuous Drain Current (Id) | 79 A | 79 A | 79 A | 85 A | 50 A |
| Rds(on) Max @ Vgs=10V | 8.4 mΩ | 8.4 mΩ | 8.4 mΩ | 5.9 mΩ | 25 mΩ |
| Power Dissipation (Pd) | 110 W | 110 W | 110 W | 330 W | 71 W |
| Automotive Qualified | No | No | Yes (AEC-Q101) | No | No |
| Polarity | N-Channel | N-Channel | N-Channel | N-Channel | N-Channel |
主な差別化要因
- Tape-and-reel packaging for high-volume assembly （vs IRFR1018EPBF)
- AEC-Q101 automotive qualification in same package （vs AUIRFR1018E)
- Optimised 60V/8.4mΩ sweet spot for 24V bus systems （vs IRFS4321TRLPBF)
- Avalanche-rated ruggedness vs generic 60V FETs （vs SUD50N06-25L)
設計ノート
The TO-252AA (D-Pak) package relies on the PCB copper as its primary heatsink. For continuous operation at currents above 30A, use at least 1 square inch of 2oz copper on the drain tab landing pad, with thermal vias to internal copper planes. Estimated: with the standard 1 sq inch FR-4 footprint, RθJA is approximately 50 °C/W, limiting continuous drain current to about 25A at 25°C ambient with Tj max=175°C. Without adequate copper, the device will thermally limit well below its 79A datasheet rating.
Minimise parasitic inductance in the high-current switching loop: place the FET close to the input bypass capacitors and use wide, short traces on the drain and source pads. The 46nC gate charge combined with even 20nH of source-inductance can produce gate-drive ringing above 20V peak, risking gate-oxide overstress. A small gate-source resistor (10-100Ω) close to the IC dampens the resonance. For switching frequencies above 100kHz, use Kelvin-source connection if the package allows, or add a small ferrite bead in the source lead.
The IRFR1018ETRPBF is NOT a logic-level MOSFET - while the gate threshold range (2.0-4.0V) allows operation from 5V microcontrollers, full enhancement requires Vgs≥10V to achieve the specified 8.4mΩ Rds(on). Driving with only 5V can result in 20-30mΩ Rds(on) at room temperature, doubling conduction loss. For 3.3V logic applications, choose a logic-level N-channel FET instead. Also avoid exceeding Vgs=±20V absolute maximum - even brief overshoot from gate-drive ringing can damage the gate oxide.
Solder paste stencil aperture should be 1:1 with the DPAK tab landing pad to ensure proper thermal-mechanical connection - the tab carries both electrical drain current and most of the heat. Insufficient solder under the tab causes high thermal resistance and mechanical stress failures during thermal cycling. Follow IPC-7530 guidelines for pad geometry and reflow profile (peak temperature 245-260°C, 60s above 220°C for lead-free SAC305 paste). MSL Level 1 means floor-life is unlimited at ≤30°C/85% RH, simplifying handling in production.
The IRFR1018ETRPBF's HEXFET technology provides good EMI performance for SMPS applications, but at high di/dt (>1A/ns) the body-diode reverse recovery can cause significant switching loss and noise. For hard-switched bridge topologies, an RC snubber (typically 10Ω + 1nF) across the drain-source can limit peak ringing voltage and reduce EMI by 10-15dB. For zero-voltage-switching (ZVS) topologies, the body diode is reverse-biased before conduction, eliminating recovery losses entirely.
コンプライアンス情報
RoHS and REACH compliant per Infineon product page. Standard grade - not AEC-Q100 qualified; choose AUIRFR1018E for automotive. MSL Level 1 per JEDEC J-STD-020. Lead-free (SAC305) reflow compatible.
