IRFZ34NPBF vs IRFZ24NPBF 比較
詳細な並列比較: IRFZ34NPBF メーカー: Infineon および IRFZ24NPBF メーカー: Infineon。主要仕様、電気的特性、パッケージ、ライフサイクルステータス、価格、在庫状況を比較して、設計要件に最適な部品を判断してください。
仕様比較
| パラメータ | IRFZ34NPBF | IRFZ24NPBF |
|---|---|---|
| ブランド | Infineon | Infineon |
| カテゴリ | MOSFETs | MOSFETs |
| ライフサイクル状態 | 有効 | 有効 |
| 在庫状況 | In Stock | In Stock |
| 単価（USD） | $0.61 | $0.46 |
| Manufacturer | Infineon Technologies (formerly International Rectifier) | — |
| Part Status | Active | — |
| FET Type | N-Channel, Enhancement Mode | N-Channel |
| Technology | HEXFET (Planar DMOS, 5th generation) | HEXFET planar cell |
| Drain-Source Voltage (V_DSS) | 55 V | — |
| Continuous Drain Current (I_D) at Tc=25C | 29 A | — |
| Pulsed Drain Current (I_DM) | [DATA_NEEDED: pulsed drain current] | — |
| Power Dissipation (P_D) at Tc=25C | 68 W | — |
| On-Resistance R_DS(on) max at V_GS=10V | 40 mOhm | — |
| Gate Charge (Q_g) typ | 22.7 nC | — |
| Gate Threshold Voltage V_GS(th) typ | [DATA_NEEDED: gate threshold voltage] | — |
| Input Capacitance (C_iss) typ | [DATA_NEEDED: input capacitance] | — |
| 動作温度範囲 | -55 C to +175 C | — |
| Maximum Junction Temperature | 175 C | — |
| パッケージ | TO-220AB (3-pin + tab, through-hole) | TO-220AB (through hole) |
| 実装タイプ | Through Hole | Through Hole |
| Lead-Free Status | Yes (Pb-free, RoHS compliant) | — |
| Qualification | JEDEC standard | JEDEC standard |
| RoHS ステータス | Compliant | Compliant |
| Configuration | Single N-Channel, 3-pin (3+tab) | — |
| Drain-to-Source Voltage (VDS) | — | 55 V |
| Continuous Drain Current (ID) at TC=25C | — | 17 A |
| Pulsed Drain Current (IDM) | — | [DATA_NEEDED: pulsed drain current] |
| Gate-to-Source Voltage (VGS) | — | ± 20 V |
| RDS(on) at VGS=10V | — | 70 mOhm (max) |
| Gate Threshold Voltage (VGS(th)) | — | [DATA_NEEDED: VGS(th) typical/min/max] |
| Total Gate Charge (Qg) | — | 13.3 nC |
| Power Dissipation (PD) at TC=25C | — | 45 W |
| 動作接合温度 | — | -55C to +175C |
| Switching Frequency Range | — | Optimized for < 100 kHz |
| Lead-Free | — | Yes (PBF suffix) |
| Channel Mode | — | Enhancement |